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AS4LC4M16S0-75TC PDF预览

AS4LC4M16S0-75TC

更新时间: 2024-01-02 20:18:15
品牌 Logo 应用领域
ALSC 存储内存集成电路光电二极管动态存储器
页数 文件大小 规格书
24页 548K
描述
3.3V 4Mx16 and 8Mx8 CMOS synchronous DRAM

AS4LC4M16S0-75TC 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
零件包装代码:TSOP2包装说明:TSOP2,
针数:54Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8542.32.00.02
风险等级:5.28Is Samacsys:N
访问模式:FOUR BANK PAGE BURST最长访问时间:5.4 ns
其他特性:AUTO/SELF REFRESHJESD-30 代码:R-PDSO-G54
长度:22.22 mm内存密度:67108864 bit
内存集成电路类型:SYNCHRONOUS DRAM内存宽度:16
功能数量:1端口数量:1
端子数量:54字数:4194304 words
字数代码:4000000工作模式:SYNCHRONOUS
最高工作温度:70 °C最低工作温度:
组织:4MX16封装主体材料:PLASTIC/EPOXY
封装代码:TSOP2封装形状:RECTANGULAR
封装形式:SMALL OUTLINE, THIN PROFILE认证状态:Not Qualified
座面最大高度:1.2 mm自我刷新:YES
最大供电电压 (Vsup):3.6 V最小供电电压 (Vsup):3 V
标称供电电压 (Vsup):3.3 V表面贴装:YES
技术:CMOS温度等级:COMMERCIAL
端子形式:GULL WING端子节距:0.8 mm
端子位置:DUAL宽度:10.16 mm
Base Number Matches:1

AS4LC4M16S0-75TC 数据手册

 浏览型号AS4LC4M16S0-75TC的Datasheet PDF文件第18页浏览型号AS4LC4M16S0-75TC的Datasheet PDF文件第19页浏览型号AS4LC4M16S0-75TC的Datasheet PDF文件第20页浏览型号AS4LC4M16S0-75TC的Datasheet PDF文件第21页浏览型号AS4LC4M16S0-75TC的Datasheet PDF文件第23页浏览型号AS4LC4M16S0-75TC的Datasheet PDF文件第24页 
AS4LC4M16S0  
AS4LC16M4S0  
®
Interleaved bank read waveform  
(BL = 8, CL = 3, Autoprecharge)  
CLK  
t
RC  
CS  
t
RC  
RAS  
t
t
t
RAS  
RAS  
RP  
tRAS  
t
RP  
CAS  
WE  
BA0/ BA1  
Bank  
RA  
Bank  
Bank  
Bank  
Bank  
Bank  
t
t
t
RCD  
RCD  
RCD  
A10  
RB  
RA  
c
a
b
A0A9, A11  
DQM  
RA  
RA  
CA  
RB  
CA  
b
CA  
c
c
a
a
b
CKE  
DQ  
QA  
a0  
QA QA  
QA QA  
a3 a4  
QA QA QA QB  
QB  
b1  
QB  
b4  
QB  
b5  
QB  
b6  
QA  
c0  
QA  
c0  
a1  
a2  
a5  
a6  
a7  
b0  
t
t
RRD  
RRD  
Active  
AP  
Read  
Bank A  
Bank B  
Active  
AP  
Read  
Read  
Active  
BA0 and BA1 together determine which bank undergoes operations. AP = internal precharge begins.  
Interleaved bank write waveform  
(BL = 8)  
CLK  
CS  
t
RC  
RAS  
t
t
RP  
RAS  
t
RAS  
CAS  
t
t
t
RCD  
RCD  
RCD  
WE  
Bank  
RA  
Bank  
Bank  
Bank  
Bank  
RA  
Bank  
BA0/ BA1  
A10  
RB  
b
a
c
RA  
RA  
CA  
RB  
b
CA  
CA  
c
c
a
a
b
A0-A9,A11  
DQM  
CKE  
DB  
b2  
DA  
a0  
DA  
a1  
DA  
a4  
DA  
a5  
DA DA  
a6 a7  
DB  
DB  
b1  
DB  
b3  
DB  
b4  
DB  
b5  
DB  
b6  
DB  
b7  
DA  
c0  
DA  
c1  
DA  
c2  
b0  
DQ  
Write  
Precharge  
Active  
Write  
Bank A Active  
Bank B  
Active  
Write  
Precharge  
BA0 and BA1 together determine which bank undergoes operations.  
22  
ALLIANCE SEMICONDUCTOR  
7/ 5/ 00  

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