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AS4LC4M4DG-6/IT PDF预览

AS4LC4M4DG-6/IT

更新时间: 2024-11-11 06:37:51
品牌 Logo 应用领域
AUSTIN 动态存储器
页数 文件大小 规格书
19页 2603K
描述
4M x 4 CMOS DRAM WITH FAST PAGE MODE, 3.3V

AS4LC4M4DG-6/IT 数据手册

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16 Meg FPM DRAM  
AS4LC4M4  
Austin Semiconductor, Inc.  
4M x 4 CMOS DRAM  
WITH FAST PAGE MODE, 3.3V  
PIN ASSIGNMENT  
(Top View)  
AVAILABLEAS MILITARY  
SPECIFICATIONS  
MIL-STD-883  
1
2
3
4
5
6
24  
23  
22  
21  
20  
19  
Vss  
Vcc  
DQ0  
DQ1  
W\  
RAS\  
NC  
DQ3  
DQ2  
CAS\  
OE\  
A9  
FEATURES  
• Fast Page Mode Operation  
• CAS\-before-RAS\ Refresh Capability  
• RAS\-only and Hidden Refresh Capability  
• Self-refresh Capability  
• Fast Parallel Test Mode Capability  
• TTL Compatible Inputs and Outputs  
• Early Write or Output Enable Controlled Write  
• JEDEC Standard Pinout  
7
8
9
10  
11  
12  
18  
17  
16  
15  
14  
13  
A8  
A7  
A6  
A5  
A4  
Vss  
A10  
A0  
A1  
A2  
A3  
Vcc  
• Single +3.3V (±10%) Power Supply  
OPTIONS  
MARKINGS  
Timing  
60ns access  
70ns access  
-6  
-7  
PIN ASSIGNMENT  
PIN  
FUNCTION  
A0 - A10  
Address Inputs  
Data In/Out  
Package  
Plastic TSOP, 24-pin  
DG  
DQ0 -DQ3  
VSS  
Ground  
Operating Temperature Ranges  
Military (-55oC to +125oC)  
Industrial (-40oC to +85oC)  
XT  
IT  
RAS\  
CAS\  
W\  
Row Address Strobe  
Column Address Strobe  
Read/Write Input  
Data Output Enable  
Power (+5V)  
GENERAL DESCRIPTION  
The Austin Semiconductor, Inc. AS4C4M4DG is a  
4,194,304 x 4 bit Fast Page Mode CMOS DRAM offering  
high speed random access of memory cells within the same  
row. This device features a +5V (±10%) power supply,  
refresh cycle (2K), and fast access times (60 and 70ns). Other  
features include CAS\-before-RAS\, RAS\-only refresh, self-  
refresh operation (128ms refresh period), and Hidden refresh  
capabilities. This 4M x 4 Fast Page Mode DRAM is  
fabricated using an advanced CMOS process to realize high  
bandwidth, low power consumption and high reliability. It may  
OE\  
VCC  
NC  
No Connect  
ACTIVE POWER DISSIPATION  
SPEED  
2K  
550  
UNITS  
mW  
-6  
-7  
be used as main memory for high level computers,  
computers and personal computers.  
micro-  
mW  
PERFORMANCE RANGE  
For more products and information  
please visit our web site at  
www.austinsemiconductor.com  
tRAC  
tCAC  
tRC  
tPC  
SPEED  
UNITS  
-6  
-7  
60  
15  
110  
40  
ns  
ns  
AS4LC4M4  
AustinSemiconductor,Inc.reservestherighttochangeproductsorspecificationswithoutnotice.  
Rev. 0.3 7/06  
1

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