16 Meg FPM DRAM
AS4LC4M4
Austin Semiconductor, Inc.
4M x 4 CMOS DRAM
WITH FAST PAGE MODE, 3.3V
PIN ASSIGNMENT
(Top View)
AVAILABLEAS MILITARY
SPECIFICATIONS
• MIL-STD-883
1
2
3
4
5
6
24
23
22
21
20
19
Vss
Vcc
DQ0
DQ1
W\
RAS\
NC
DQ3
DQ2
CAS\
OE\
A9
FEATURES
• Fast Page Mode Operation
• CAS\-before-RAS\ Refresh Capability
• RAS\-only and Hidden Refresh Capability
• Self-refresh Capability
• Fast Parallel Test Mode Capability
• TTL Compatible Inputs and Outputs
• Early Write or Output Enable Controlled Write
• JEDEC Standard Pinout
7
8
9
10
11
12
18
17
16
15
14
13
A8
A7
A6
A5
A4
Vss
A10
A0
A1
A2
A3
Vcc
• Single +3.3V (±10%) Power Supply
OPTIONS
MARKINGS
•
Timing
60ns access
70ns access
-6
-7
PIN ASSIGNMENT
PIN
FUNCTION
A0 - A10
Address Inputs
Data In/Out
•
Package
Plastic TSOP, 24-pin
DG
DQ0 -DQ3
VSS
Ground
• Operating Temperature Ranges
Military (-55oC to +125oC)
Industrial (-40oC to +85oC)
XT
IT
RAS\
CAS\
W\
Row Address Strobe
Column Address Strobe
Read/Write Input
Data Output Enable
Power (+5V)
GENERAL DESCRIPTION
The Austin Semiconductor, Inc. AS4C4M4DG is a
4,194,304 x 4 bit Fast Page Mode CMOS DRAM offering
high speed random access of memory cells within the same
row. This device features a +5V (±10%) power supply,
refresh cycle (2K), and fast access times (60 and 70ns). Other
features include CAS\-before-RAS\, RAS\-only refresh, self-
refresh operation (128ms refresh period), and Hidden refresh
capabilities. This 4M x 4 Fast Page Mode DRAM is
fabricated using an advanced CMOS process to realize high
bandwidth, low power consumption and high reliability. It may
OE\
VCC
NC
No Connect
ACTIVE POWER DISSIPATION
SPEED
2K
550
UNITS
mW
-6
-7
be used as main memory for high level computers,
computers and personal computers.
micro-
mW
PERFORMANCE RANGE
For more products and information
please visit our web site at
www.austinsemiconductor.com
tRAC
tCAC
tRC
tPC
SPEED
UNITS
-6
-7
60
15
110
40
ns
ns
AS4LC4M4
AustinSemiconductor,Inc.reservestherighttochangeproductsorspecificationswithoutnotice.
Rev. 0.3 7/06
1