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AS4LC4M4E0-60JC PDF预览

AS4LC4M4E0-60JC

更新时间: 2024-11-10 23:31:35
品牌 Logo 应用领域
其他 - ETC 内存集成电路光电二极管动态存储器
页数 文件大小 规格书
15页 266K
描述
x4 EDO Page Mode DRAM

AS4LC4M4E0-60JC 数据手册

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March 2001  
AS4LC4M4E0  
AS4LC4M4E1  
®
4Mx4 CMOS DRAM (EDO) Family  
Features  
• Refresh  
• Organization: 4,194,304 words × 4 bits  
- 4096 refresh cycles, 64 ms refresh interval for AS4LC4M4E0  
- 2048 refresh cycles, 32 ms refresh interval for AS4LC4M4E1  
- RAS-only or CAS-before-RAS refresh or self-refresh  
• TTL-compatible, three-state I/O  
• JEDEC standard package  
- 300 mil, 24/26-pin SOJ  
• High speed  
- 50/60 ns RAS access time  
- 25/30 ns column address access time  
- 12/15 ns CAS access time  
• Low power consumption  
- Active: 500 mW max  
- Standby: 3.6 mW max, CMOS I/O  
• Extended data out  
• 3V power supply  
• Industrial and commercial temperature available  
Pin designation  
Pin arrangement  
Pin(s)  
A0 to A11  
Description  
Address inputs  
SOJ  
TSOP  
VCC  
GND  
I/O3  
I/O2  
CAS  
OE  
VCC  
GND  
I/O3  
I/O2  
CAS  
OE  
1
2
3
4
5
6
24  
23  
22  
21  
20  
19  
1
2
3
4
5
6
24  
23  
22  
21  
20  
19  
I/O0  
I/O1  
WE  
I/O0  
I/O1  
WE  
RAS  
Row address strobe  
Column address strobe  
Write enable  
Input/output  
Output enable  
Power  
CAS  
RAS  
RAS  
*NC/A11  
A9 *NC/A11  
A9  
WE  
A10  
A8  
A7  
A6  
A5  
A4  
GND  
A10  
A8  
A7  
A6  
A5  
A4  
I/O0 to I/O3  
7
8
9
10  
11  
12  
18  
17  
16  
15  
14  
13  
7
8
9
10  
11  
12  
18  
17  
16  
15  
14  
A0  
A1  
A2  
A3  
VCC  
A0  
A1  
A2  
A3  
VCC  
OE  
VCC  
GND  
13 GND  
Ground  
* NC on 2K refresh version; A11 on 4K refresh version  
Selection guide  
Symbol AS4LC4M4E0/E1-50 AS4LC4M4E0/E1-60 Unit  
Maximum RAS access time  
tRAC  
tCAA  
tCAC  
tOEA  
tRC  
50  
25  
12  
13  
80  
25  
120  
1.0  
60  
ns  
Maximum column address access time  
Maximum CAS access time  
30  
ns  
15  
ns  
Maximum output enable (OE) access time  
Minimum read or write cycle time  
Minimum fast page mode cycle time  
Maximum operating current  
15  
ns  
100  
30  
ns  
tPC  
ns  
ICC1  
ICC5  
110  
1.0  
mA  
mA  
Maximum CMOS standby current  
4/11/01; V.1.1  
Alliance Semiconductor  
P. 1 of 15  
Copyright © Alliance Semiconductor. All rights reserved.  

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