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AS4LC4M4DG-7/IT PDF预览

AS4LC4M4DG-7/IT

更新时间: 2024-02-21 10:50:49
品牌 Logo 应用领域
AUSTIN 内存集成电路光电二极管动态存储器
页数 文件大小 规格书
19页 2603K
描述
4M x 4 CMOS DRAM WITH FAST PAGE MODE, 3.3V

AS4LC4M4DG-7/IT 技术参数

生命周期:Obsolete零件包装代码:TSOP
包装说明:TSOP2,针数:24
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8542.32.00.02风险等级:5.24
访问模式:FAST PAGE最长访问时间:70 ns
其他特性:RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH/SELF REFRESHJESD-30 代码:R-PDSO-G24
JESD-609代码:e4长度:17.14 mm
内存密度:16777216 bit内存集成电路类型:FAST PAGE DRAM
内存宽度:4功能数量:1
端口数量:1端子数量:24
字数:4194304 words字数代码:4000000
工作模式:ASYNCHRONOUS最高工作温度:125 °C
最低工作温度:-55 °C组织:4MX4
封装主体材料:PLASTIC/EPOXY封装代码:TSOP2
封装形状:RECTANGULAR封装形式:SMALL OUTLINE, THIN PROFILE
认证状态:Not Qualified筛选级别:MIL-STD-883
座面最大高度:1.2 mm自我刷新:YES
最大供电电压 (Vsup):3.6 V最小供电电压 (Vsup):3 V
标称供电电压 (Vsup):3.3 V表面贴装:YES
技术:CMOS温度等级:MILITARY
端子面层:PALLADIUM GOLD端子形式:GULL WING
端子节距:1.27 mm端子位置:DUAL
宽度:7.62 mmBase Number Matches:1

AS4LC4M4DG-7/IT 数据手册

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16 Meg FPM DRAM  
AS4LC4M4  
Austin Semiconductor, Inc.  
4M x 4 CMOS DRAM  
WITH FAST PAGE MODE, 3.3V  
PIN ASSIGNMENT  
(Top View)  
AVAILABLEAS MILITARY  
SPECIFICATIONS  
MIL-STD-883  
1
2
3
4
5
6
24  
23  
22  
21  
20  
19  
Vss  
Vcc  
DQ0  
DQ1  
W\  
RAS\  
NC  
DQ3  
DQ2  
CAS\  
OE\  
A9  
FEATURES  
• Fast Page Mode Operation  
• CAS\-before-RAS\ Refresh Capability  
• RAS\-only and Hidden Refresh Capability  
• Self-refresh Capability  
• Fast Parallel Test Mode Capability  
• TTL Compatible Inputs and Outputs  
• Early Write or Output Enable Controlled Write  
• JEDEC Standard Pinout  
7
8
9
10  
11  
12  
18  
17  
16  
15  
14  
13  
A8  
A7  
A6  
A5  
A4  
Vss  
A10  
A0  
A1  
A2  
A3  
Vcc  
• Single +3.3V (±10%) Power Supply  
OPTIONS  
MARKINGS  
Timing  
60ns access  
70ns access  
-6  
-7  
PIN ASSIGNMENT  
PIN  
FUNCTION  
A0 - A10  
Address Inputs  
Data In/Out  
Package  
Plastic TSOP, 24-pin  
DG  
DQ0 -DQ3  
VSS  
Ground  
Operating Temperature Ranges  
Military (-55oC to +125oC)  
Industrial (-40oC to +85oC)  
XT  
IT  
RAS\  
CAS\  
W\  
Row Address Strobe  
Column Address Strobe  
Read/Write Input  
Data Output Enable  
Power (+5V)  
GENERAL DESCRIPTION  
The Austin Semiconductor, Inc. AS4C4M4DG is a  
4,194,304 x 4 bit Fast Page Mode CMOS DRAM offering  
high speed random access of memory cells within the same  
row. This device features a +5V (±10%) power supply,  
refresh cycle (2K), and fast access times (60 and 70ns). Other  
features include CAS\-before-RAS\, RAS\-only refresh, self-  
refresh operation (128ms refresh period), and Hidden refresh  
capabilities. This 4M x 4 Fast Page Mode DRAM is  
fabricated using an advanced CMOS process to realize high  
bandwidth, low power consumption and high reliability. It may  
OE\  
VCC  
NC  
No Connect  
ACTIVE POWER DISSIPATION  
SPEED  
2K  
550  
UNITS  
mW  
-6  
-7  
be used as main memory for high level computers,  
computers and personal computers.  
micro-  
mW  
PERFORMANCE RANGE  
For more products and information  
please visit our web site at  
www.austinsemiconductor.com  
tRAC  
tCAC  
tRC  
tPC  
SPEED  
UNITS  
-6  
-7  
60  
15  
110  
40  
ns  
ns  
AS4LC4M4  
AustinSemiconductor,Inc.reservestherighttochangeproductsorspecificationswithoutnotice.  
Rev. 0.3 7/06  
1

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