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AS4LC4M4DG-7/IT PDF预览

AS4LC4M4DG-7/IT

更新时间: 2024-01-16 12:56:44
品牌 Logo 应用领域
AUSTIN 内存集成电路光电二极管动态存储器
页数 文件大小 规格书
19页 2603K
描述
4M x 4 CMOS DRAM WITH FAST PAGE MODE, 3.3V

AS4LC4M4DG-7/IT 技术参数

生命周期:Obsolete零件包装代码:TSOP
包装说明:TSOP2,针数:24
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8542.32.00.02风险等级:5.24
访问模式:FAST PAGE最长访问时间:70 ns
其他特性:RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH/SELF REFRESHJESD-30 代码:R-PDSO-G24
JESD-609代码:e4长度:17.14 mm
内存密度:16777216 bit内存集成电路类型:FAST PAGE DRAM
内存宽度:4功能数量:1
端口数量:1端子数量:24
字数:4194304 words字数代码:4000000
工作模式:ASYNCHRONOUS最高工作温度:125 °C
最低工作温度:-55 °C组织:4MX4
封装主体材料:PLASTIC/EPOXY封装代码:TSOP2
封装形状:RECTANGULAR封装形式:SMALL OUTLINE, THIN PROFILE
认证状态:Not Qualified筛选级别:MIL-STD-883
座面最大高度:1.2 mm自我刷新:YES
最大供电电压 (Vsup):3.6 V最小供电电压 (Vsup):3 V
标称供电电压 (Vsup):3.3 V表面贴装:YES
技术:CMOS温度等级:MILITARY
端子面层:PALLADIUM GOLD端子形式:GULL WING
端子节距:1.27 mm端子位置:DUAL
宽度:7.62 mmBase Number Matches:1

AS4LC4M4DG-7/IT 数据手册

 浏览型号AS4LC4M4DG-7/IT的Datasheet PDF文件第1页浏览型号AS4LC4M4DG-7/IT的Datasheet PDF文件第3页浏览型号AS4LC4M4DG-7/IT的Datasheet PDF文件第4页浏览型号AS4LC4M4DG-7/IT的Datasheet PDF文件第5页浏览型号AS4LC4M4DG-7/IT的Datasheet PDF文件第6页浏览型号AS4LC4M4DG-7/IT的Datasheet PDF文件第7页 
16 Meg FPM DRAM  
AS4LC4M4  
Austin Semiconductor, Inc.  
FUNCTIONAL BLOCK DIAGRAM  
VCC  
RAS\  
Control  
Clocks  
VSS  
CAS\  
W\  
VBB Generator  
Data In  
Buffer  
Row Decoder  
Refresh Timer  
Refresh Control  
Refresh Counter  
DQ0  
to  
DQ3  
Memory Array  
4,194,304 x 4  
Cells  
Row Address Buffer  
Col. Address Buffer  
(A0 - A10)  
(A0 - A10)  
Data Out  
Buffer  
Column Decoder  
OE\  
*Stresses greater than those listed under "Absolute Maximum  
Ratings" may cause permanent damage to the device. This is  
a stress rating only and functional operation of the device at  
these or any other conditions above those indicated in the  
operation section of this specification is not implied.  
Exposure to absolute maximum rating conditions for extended  
periods may affect reliability. Junction temperature depends  
upon package type, cycle time, loading, ambient temperature  
and airflow, and humidity (plastics).  
ABSOLUTE MAXIMUM RATINGS*  
Voltage on any pin relative toVCC (VIN, VOUT) ..........-0.5Vto +4.6V  
Voltage onVCC supply relative toVSS (VCC)................-0.5Vto +4.6V  
StorageTemperature (Tstg).........................................-55°C to +150°C  
Power Dissipation (PD)....................................................................1W  
Short Circuit Output Current (IOS Address).............................50mA  
ELECTRICAL CHARACTERISTICSAND RECOMMENDED OPERATING CONDITIONS  
(-55oC < TA < +125oC & -40oC < TA < +85oC ; Vcc = 3.3V +0.3V)  
PARAMETER  
Supply Voltage  
Ground  
SYMBOL  
MIN  
TYP  
MAX  
UNITS  
3.0  
3.3  
3.6  
V
VCC  
0
0
0
V
V
V
VSS  
VIH  
VIL  
VCC + 0.31  
0.8  
2.0  
---  
---  
Input High Voltage  
-0.32  
Input Low Voltage  
NOTES:  
1. VCC + .13V/15ns, Pulse width is measured at VCC  
2. -1.3V/15ns, Pulse width is measured at VSS  
AS4LC4M4  
AustinSemiconductor,Inc.reservestherighttochangeproductsorspecificationswithoutnotice.  
Rev. 0.3 7/06  
2

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