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AS4DDR16M72-10/ET PDF预览

AS4DDR16M72-10/ET

更新时间: 2024-02-16 19:42:08
品牌 Logo 应用领域
AUSTIN 内存集成电路动态存储器双倍数据速率
页数 文件大小 规格书
19页 358K
描述
16Mx72 DDR SDRAM iNTEGRATED Plastic Encapsulated Microcircuit

AS4DDR16M72-10/ET 技术参数

生命周期:Transferred零件包装代码:BGA
包装说明:BGA,针数:219
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8542.32.00.36风险等级:5.37
Is Samacsys:N访问模式:FOUR BANK PAGE BURST
最长访问时间:0.8 ns其他特性:AUTO/SELF REFRESH
JESD-30 代码:R-PBGA-B219JESD-609代码:e4
内存密度:1207959552 bit内存集成电路类型:DDR DRAM
内存宽度:72功能数量:1
端口数量:1端子数量:219
字数:16777216 words字数代码:16000000
工作模式:SYNCHRONOUS最高工作温度:125 °C
最低工作温度:-55 °C组织:16MX72
封装主体材料:PLASTIC/EPOXY封装代码:BGA
封装形状:RECTANGULAR封装形式:GRID ARRAY
认证状态:Not Qualified座面最大高度:2.03 mm
自我刷新:YES最大供电电压 (Vsup):2.7 V
最小供电电压 (Vsup):2.3 V标称供电电压 (Vsup):2.5 V
表面贴装:YES技术:CMOS
温度等级:MILITARY端子面层:PALLADIUM GOLD
端子形式:BALL端子节距:1.27 mm
端子位置:BOTTOMBase Number Matches:1

AS4DDR16M72-10/ET 数据手册

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iPEM  
1.2 Gb SDRAM-DDR  
AS4DDR16M72PBG  
Austin Semiconductor, Inc.  
16Mx72 DDR SDRAM  
iNTEGRATED Plastic Encapsulated Microcircuit  
BENEFITS  
FEATURES  
„ DDR SDRAM Data Rate = 200, 250, 266, 333Mbps  
„ Package:  
„ 40% SPACE SAVINGS  
„ Redꢁced part cꢀꢁnt  
219 Plastic Ball Grid Array (PBGA), 32 x 25mm  
„ Redꢁced I/O cꢀꢁnt  
„ 2.5V 0.2V cꢀre pꢀoer sꢁpply  
34% I/O Redꢁctiꢀn  
„ 2.5V I/O (SSTL_2 cꢀmpatible)  
„ Redꢁced trace lengths fꢀr lꢀoer parasitic  
capacitance  
„ Differential clꢀck inpꢁts (CLK and CLK#)  
„ Cꢀmmands entered ꢀn each pꢀsitive CLK edge  
„ Internal pipelined dꢀꢁble-data-rate (DDR)  
architectꢁre; toꢀ data accesses per clꢀck cycle  
„ Prꢀgrammable Bꢁrst length: 2,4 ꢀr 8  
„ Bidirectiꢀnal data strꢀbe (DQS) transmitted/received  
oith data, i.e., sꢀꢁrce-synchrꢀnꢀꢁs data captꢁre  
(ꢀne per byte)  
„ Sꢁitable fꢀr hi-reliability applicatiꢀns  
„ Laminate interpꢀser fꢀr ꢀptimꢁm TCE match  
„ Upgradeable tꢀ 32M x 72 density  
(AS4DDR32M72PBG)  
„ Meets ꢀr exceeds pꢁblished specificatiꢀns ꢀf  
White’s W3E16M72S-XBX  
„ DQS edge-aligned oith data fꢀr READs; center-aligned  
oith data fꢀr WRITEs  
„ DLL tꢀ align DQ and DQS transitiꢀns oith CLK  
„ Fꢀꢁr internal banks fꢀr cꢀncꢁrrent ꢀperatiꢀn  
„ Toꢀ data mask (DM) pins fꢀr masking orite data  
„ Prꢀgrammable IOL/IOH ꢀptiꢀn  
„ Aꢁtꢀ precharge ꢀptiꢀn  
„ Aꢁtꢀ Refresh and Self Refresh Mꢀdes  
„ Indꢁstrial, Enhanced and Military Temperatꢁre  
Ranges  
„ Organized as 16M x 72/80  
„ Weight: AS4DDR16M72PBG = 3.50 grams typical  
* This prꢀdꢁct and ꢀr it’s specificatiꢀns is sꢁbject tꢀ change oithꢀꢁt nꢀtice..  
Monolithic Solution  
Integrated MCP Solution  
S
A
V
O
P
T
I
11.9  
11.9  
11.9  
11.9  
11.9  
I
25  
22.3  
N
G
S
O
N
S
32  
Area  
5 x 265mm2 = 1328mm2 Plus  
5 x 66 pins = 320 pins  
800mm2  
219 Balls  
40+%  
34 %  
I/O  
Count  
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.  
AS4DDR16M72PBG  
Rev. 2.1 06/09  
1

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