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AS4DDR16M72-10/ET PDF预览

AS4DDR16M72-10/ET

更新时间: 2024-01-15 23:44:31
品牌 Logo 应用领域
AUSTIN 内存集成电路动态存储器双倍数据速率
页数 文件大小 规格书
19页 358K
描述
16Mx72 DDR SDRAM iNTEGRATED Plastic Encapsulated Microcircuit

AS4DDR16M72-10/ET 技术参数

生命周期:Transferred零件包装代码:BGA
包装说明:BGA,针数:219
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8542.32.00.36风险等级:5.37
Is Samacsys:N访问模式:FOUR BANK PAGE BURST
最长访问时间:0.8 ns其他特性:AUTO/SELF REFRESH
JESD-30 代码:R-PBGA-B219JESD-609代码:e4
内存密度:1207959552 bit内存集成电路类型:DDR DRAM
内存宽度:72功能数量:1
端口数量:1端子数量:219
字数:16777216 words字数代码:16000000
工作模式:SYNCHRONOUS最高工作温度:125 °C
最低工作温度:-55 °C组织:16MX72
封装主体材料:PLASTIC/EPOXY封装代码:BGA
封装形状:RECTANGULAR封装形式:GRID ARRAY
认证状态:Not Qualified座面最大高度:2.03 mm
自我刷新:YES最大供电电压 (Vsup):2.7 V
最小供电电压 (Vsup):2.3 V标称供电电压 (Vsup):2.5 V
表面贴装:YES技术:CMOS
温度等级:MILITARY端子面层:PALLADIUM GOLD
端子形式:BALL端子节距:1.27 mm
端子位置:BOTTOMBase Number Matches:1

AS4DDR16M72-10/ET 数据手册

 浏览型号AS4DDR16M72-10/ET的Datasheet PDF文件第3页浏览型号AS4DDR16M72-10/ET的Datasheet PDF文件第4页浏览型号AS4DDR16M72-10/ET的Datasheet PDF文件第5页浏览型号AS4DDR16M72-10/ET的Datasheet PDF文件第7页浏览型号AS4DDR16M72-10/ET的Datasheet PDF文件第8页浏览型号AS4DDR16M72-10/ET的Datasheet PDF文件第9页 
iPEM  
1.2 Gb SDRAM-DDR  
AS4DDR16M72PBG  
Austin Semiconductor, Inc.  
REGISTER DEFINITION  
TABLE 1 - BURST DEFINITION  
MODE REGISTER  
Burst  
Starting Column  
Address  
Order of Accesses Within a Burst  
Length  
Type = Sequential  
Type = Interleaved  
The Mꢀde Register is ꢁsed tꢀ define the specific mꢀde ꢀf  
ꢀperatiꢀn ꢀf the DDR SDRAM. This definitiꢀn inclꢁdes the  
selectiꢀn ꢀf a bꢁrst length, a bꢁrst type, a CAS latency, and  
an ꢀperating mꢀde, as shꢀon in Figꢁre 3. The Mꢀde Register  
is prꢀgrammed via the MODE REGISTER SET cꢀmmand  
(oith BA0 = 0 and BA1 = 0) and oill retain the stꢀred  
infꢀrmatiꢀn ꢁntil it is prꢀgrammed again ꢀr the device lꢀses  
pꢀoer. (Except fꢀr bit A8 ohich is self clearing).  
A0  
2
4
0
1
0-1  
1-0  
0-1  
1-0  
A1 A0  
0
0
1
1
0
1
0
1
0-1-2-3  
1-2-3-0  
2-3-0-1  
3-0-1-2  
0-1-2-3  
1-0-3-2  
2-3-0-1  
3-2-1-0  
A2 A1 A0  
0
0
0
0
1
1
1
1
0
0
1
1
0
0
1
1
0
1
0
1
0
1
0
1
0-1-2-3-4-5-6-7  
1-2-3-4-5-6-7-0  
2-3-4-5-6-7-0-1  
3-4-5-6-7-0-1-2  
4-5-6-7-0-1-2-3  
5-6-7-0-1-2-3-4  
6-7-0-1-2-3-4-5  
7-0-1-2-3-4-5-6  
0-1-2-3-4-5-6-7  
1-0-3-2-5-4-7-6  
2-3-0-1-6-7-4-5  
3-2-1-0-7-6-5-4  
4-5-6-7-0-1-2-3  
5-4-7-6-1-0-3-2  
6-7-4-5-2-3-0-1  
7-6-5-4-3-2-1-0  
Reprꢀgramming the mꢀde register oill nꢀt alter the cꢀntents  
ꢀf the memꢀry, prꢀvided it is perfꢀrmed cꢀrrectly. The Mꢀde  
Register mꢁst be lꢀaded (relꢀaded) ohen all banks are  
idle and nꢀ bꢁrsts are in prꢀgress, and the cꢀntrꢀller mꢁst  
oait the specified time befꢀre initiating the sꢁbseqꢁent  
ꢀperatiꢀn. Viꢀlating either ꢀf these reqꢁirements oill resꢁlt  
in ꢁnspecifi ed ꢀperatiꢀn. Mꢀde register bits A0-A2 specify  
the bꢁrst length, A3 specifies the type ꢀf bꢁrst (seqꢁential ꢀr  
interleaved), A4-A6 specify the CAS latency, and A7-A12  
specify the ꢀperating mꢀde.  
8
NOTES:  
1. Fꢀr a bꢁrst length ꢀf toꢀ, A1-Ai select toꢀ-data-element blꢀck;  
A0 selects the starting cꢀlꢁmn oithin the blꢀck.  
2. Fꢀr a bꢁrst length ꢀf fꢀꢁr, A2-Ai select fꢀꢁr-data-element blꢀck;  
A0-1 select the starting cꢀlꢁmn oithin the blꢀck.  
3. Fꢀr a bꢁrst length ꢀf eight, A3-Ai select eight-data-element blꢀck;  
A0-2 select the starting cꢀlꢁmn oithin the blꢀck.  
4. Whenever a bꢀꢁndary ꢀf the blꢀck is reached oithin a given  
seqꢁence abꢀve, the fꢀllꢀoing access oraps oithin the blꢀck.  
BURST LENGTH  
Read and orite accesses tꢀ the DDR SDRAM are bꢁrst  
ꢀriented, oith the bꢁrst length being prꢀgrammable, as  
shꢀon in Figꢁre 3. The bꢁrst length determines the maximꢁm  
nꢁmber ꢀf cꢀlꢁmn lꢀcatiꢀns that can be accessed fꢀr a given  
READ ꢀr WRITE cꢀmmand. Bꢁrst lengths ꢀf 2, 4 ꢀr 8  
lꢀcatiꢀns are available fꢀr bꢀth the seqꢁential and the  
interleaved bꢁrst types.  
READ LATENCY  
The READ latency is the delay, in clꢀck cycles, betoeen the  
registratiꢀn ꢀf a READ cꢀmmand and the availability ꢀf the  
first bit ꢀf ꢀꢁtpꢁt data. The latency can be set tꢀ 2 ꢀr 2.5  
clꢀcks.  
Reserved states shꢀꢁld nꢀt be ꢁsed, as ꢁnknꢀon ꢀperatiꢀn  
ꢀr incꢀmpatibility oith fꢁtꢁre versiꢀns may resꢁlt.  
If a READ cꢀmmand is registered at clꢀck edge n, and the  
latency is m clꢀcks, the data oill be available by clꢀck edge  
n+m. Table 2 belꢀo indicates the ꢀperating freqꢁencies at  
ohich each CAS latency setting can be ꢁsed.  
When a READ ꢀr WRITE cꢀmmand is issꢁed, a blꢀck ꢀf  
cꢀlꢁmns eqꢁal tꢀ the bꢁrst length is effectively selected. All  
accesses fꢀr that bꢁrst take place oithin this blꢀck, meaning  
that the bꢁrst oill orap oithin the blꢀck if a bꢀꢁndary is  
reached. The blꢀck is ꢁniqꢁely selected by A1-Ai ohen the  
bꢁrst length is set tꢀ toꢀ; by A2-Ai ohen the bꢁrst length is  
set tꢀ fꢀꢁr (ohere Ai is the mꢀst significant cꢀlꢁmn address  
fꢀr a given cꢀnfigꢁratiꢀn); and by A3-Ai ohen the bꢁrst length  
is set tꢀ eight. The remaining (least signifi cant) address  
bit(s) is (are) ꢁsed tꢀ select the starting lꢀcatiꢀn oithin the  
blꢀck. The prꢀgrammed bꢁrst length applies tꢀ bꢀth READ  
and WRITE bꢁrsts.  
Reserved states shꢀꢁld nꢀt be ꢁsed as ꢁnknꢀon ꢀperatiꢀn  
ꢀr incꢀmpatibility oith fꢁtꢁre versiꢀns may resꢁlt.  
TABLE 2 - CAS LATENCY  
ALLOWABLE OPERATING  
FREQUENCY (MHz)  
CAS  
CAS  
SPEED  
-10  
LATENCY=2 LATENCY=2.5  
BURST TYPE  
” 75  
” 100  
” 100  
” 100  
” 100  
” 125  
” 133  
” 166  
Accesses oithin a given bꢁrst may be prꢀgrammed tꢀ be  
either seqꢁential ꢀr interleaved; this is referred tꢀ as the  
bꢁrst type and is selected via bit M3.  
-8  
-75  
-6  
The ꢀrdering ꢀf accesses oithin a bꢁrst is determined by  
the bꢁrst length, the bꢁrst type and the starting cꢀlꢁmn  
address, as shꢀon in Table 1.  
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.  
AS4DDR16M72PBG  
Rev. 2.1 06/09  
6

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