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AS29LV800B-70RTC PDF预览

AS29LV800B-70RTC

更新时间: 2024-10-27 23:16:19
品牌 Logo 应用领域
ANADIGICS 闪存可编程只读存储器电动程控只读存储器电可擦编程只读存储器
页数 文件大小 规格书
25页 440K
描述
3V 1M】8/512K】16 CMOS Flash EEPROM

AS29LV800B-70RTC 数据手册

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AS29LV800  
March 2001  
®
Item  
Description  
The unlock bypass feature increases the speed at which the system programs bytes or words to the  
device because it bypasses the first two unlock cycles of the standard program command sequence.  
To initiate the unlock bypass command sequence, two unlock cycles must be written, then  
followed by a third cycle which has the unlock bypass command, 20h.  
The device then begins the unlock bypass mode. In order to program in this mode, a two cycle  
unlock bypass program sequence is required. The first cycle has the unlock bypass program  
command, A0h. It is followed by a second cycle which has the program address and data. To  
program additional data, the same sequence must be followed.  
Unlock Bypass  
Command Sequence  
The unlock bypass mode has two valid commands, the Unlock Bypass Program command and the  
Unlock Bypass Reset command. The only way the system can exit the unlock bypass mode is by  
issuing the unlock bypass reset command sequence. This sequence involves two cycles. The first  
cycle contains the data, 90h. The second cycle contains the data 00h. Addresses are don’t care for  
both cycles. The device then returns to reading array data.  
Chip erase requires six bus cycles: two unlock write cycles; a setup command, two additional  
unlock write cycles; and finally the Chip Erase command.  
Chip erase does not require logical 0s to be written prior to erasure. When the automated on-chip  
erase algorithm is invoked with the Chip Erase command sequence, AS29LV800 automatically  
programs and verifies the entire memory array for an all-zero pattern prior to erase. The 29LV800  
returns to read mode upon completion of chip erase unless DQ5 is set high as a result of exceeding  
time limit.  
Chip Erase  
Sector erase requires six bus cycles: two unlock write cycles, a setup command, two additional  
unlock write cycles, and finally the Sector Erase command. Identify the sector to be erased by  
addressing any location in the sector. The address is latched on the falling edge of WE; the  
command, 30h is latched on the rising edge of WE. The sector erase operation begins after a sector  
erase time-out.  
To erase multiple sectors, write the Sector Erase command to each of the addresses of sectors to  
erase after following the six bus cycle operation above. Timing between writes of additional sectors  
must be less than the erase time-out period, or the AS29LV800 ignores the command and erasure  
begins. During the time-out period any falling edge of WE resets the time-out. Any command  
(other than Sector Erase or Erase Suspend) during time-out period resets the AS29LV800 to read  
mode, and the device ignores the sector erase command string. Erase such ignored sectors by  
restarting the Sector Erase command on the ignored sectors.  
Sector Erase  
The entire array need not be written with 0s prior to erasure. AS29LV800 writes 0s to the entire  
sector prior to electrical erase; writing of 0s affects only selected sectors, leaving non-selected  
sectors unaffected. AS29LV800 requires no CPU control or timing signals during sector erase  
operations.  
Automatic sector erase begins after sector erase time-out from the last rising edge of WE from the  
sector erase command stream and ends when the DATA polling (DQ7) is logical 1. DATA polling  
address must be performed on addresses that fall within the sectors being erased. AS29LV800  
returns to read mode after sector erase unless DQ5 is set high by exceeding the time limit.  
3/22/01; V.1.0  
Alliance Semiconductor  
P. 8 of 25  

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