Datasheet > AS29LV800T-90TC

AS29LV800T-90TC

更新时间： 2024-11-23 23:16:19

品牌	Logo	应用领域
ANADIGICS		闪存可编程只读存储器电动程控只读存储器电可擦编程只读存储器
页数	文件大小	规格书
25页	440K
描述
3V 1M】8/512K】16 CMOS Flash EEPROM

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中文翻译

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数据手册

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AS29LV800T-90TC 数据手册

AS29LV800

March 2001

3V 1M × 8/512K × 16 CMOS Flash EEPROM

• Low power consumption

- 200 nA typical automatic sleep mode current

Features

• Organization: 1M×8/512K×16

- 200 nA typical standby current

- 10 mA typical read current

• JEDEC standard software, packages and pinouts

- 48-pin TSOP

- 44-pin SO; availability TBD

• Detection of program/erase cycle completion

- DQ7 DATA polling

- DQ6 toggle bit

- DQ2 toggle bit

- RY/BY output

• Erase suspend/resume

• Sector architecture

- One 16K; two 8K; one 32K; and fifteen 64K byte sectors

- One 8K; two 4K; one 16K; and fifteen 32K word sectors

- Boot code sector architecture—T (top) or B (bottom)

- Erase any combination of sectors or full chip

• Single 2.7-3.6V power supply for read/write operations

• Sector protection

• High speed 70/80/90/120 ns address access time

• Automated on-chip programming algorithm

- Automatically programs/verifies data at specified address

• Automated on-chip erase algorithm

- Automatically preprograms/erases chip or specified

sectors

- Supports reading data from or programming data to a

sector not being erased

• Low V write lock-out below 1.5V

• Hardware RESET pin

- Resets internal state machine to read mode

• 10 year data retention at 150C

• 100,000 write/erase cycle endurance

Pin arrangement

Logic block diagram

48-pin TSOP

44-pin SO

Sector protect/

erase voltage

switches

RY/BY

DQ0–DQ15

RY/BY

A18

A17

RESET

Erase voltage

generator

Input/output

buffers

RESET

A10

A11

A12

A13

A14

A15

A16

BYTE

Program/erase

control

BYTE

Program voltage

generator

Command

AS29LV800

STB

Chip enable

Output enable

Logic

Data latch

DQ0

DQ8

DQ1

DQ9

DQ2

DQ10

DQ3

DQ11

DQ15/A-1

DQ7

A-1

DQ14

DQ6

Y decoder

Y gating

STB

DQ13

DQ5

detector

Timer

DQ12

DQ4

X decoder

Cell matrix

A0–A18

Selection guide

29LV800-70R^*29LV800-80 29LV800-90 29LV800-120

Unit

Maximum access time

t_AA

120

Maximum chip enable access time

Maximum output enable access time

* Regulated voltage range of 3.0 to 3.6V

t_CE

t_OE

3/22/01; V.1.0

Alliance Semiconductor

P. 1 of 25

12 3 4 5 6 7...25

中文翻译

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与AS29LV800T-90TC相关器件

型号	品牌	获取价格	描述	数据表
AS29LV800T-90TI	ANADIGICS	获取价格	3V 1M】8/512K】16 CMOS Flash EEPROM
AS29P200	ETC	获取价格	5V 256K x 8 / 128K x 16 CMOS Flash EEPROM
AS2A30152-T9	FOXCONN	获取价格	Card Edge Connector, 152 Contact(s), 2 Row(s), Female, Right Angle, Surface Mount Terminal
AS2A31152-T9	FOXCONN	获取价格	Card Edge Connector, 152 Contact(s), 2 Row(s), Female, Right Angle, Surface Mount Terminal
AS-2B	TTELEC	获取价格	Semi-Precision Power Wirewound Resistor
AS2-B0-10-430-5D1-C	Carling Technologies	获取价格	Magnetic Circuit Breaker,
AS-2C	TTELEC	获取价格	Semi-Precision Power Wirewound Resistor
AS2D-2M-10-Z	NIDEC	获取价格	Hyper-miniature Slide Switchess
AS2D-5M-10-Z	NIDEC	获取价格	Hyper-miniature Slide Switchess
AS2D-6M-10-Z	NIDEC	获取价格	Hyper-miniature Slide Switchess

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