Datasheet > APT84M50B2_09

APT84M50B2_09

更新时间： 2024-11-25 08:33:35

品牌	Logo	应用领域
美高森美 - MICROSEMI		/
页数	文件大小	规格书
4页	117K
描述
N-Channel MOSFET

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APT84M50B2_09 数据手册

APT84M50B2

APT84M50L

500V, 84A, 0.065Ω Max

N-Channel MOSFET

T-Max^TM

TO-264

Power MOS 8^™is a high speed, high voltage N-channel switch-mode power MOSFET.

A proprietary planar stripe design yields excellent reliability and manufacturability. Low

switching loss is achieved with low input capacitance and ultra low C_rss"Miller" capaci-

tance. The intrinsic gate resistance and capacitance of the poly-silicon gate structure

help control slew rates during switching, resulting in low EMI and reliable paralleling,

even when switching at very high frequency. Reliability in ﬂyback, boost, forward, and

other circuits is enhanced by the high avalanche energy capability.

APT84M50B2

APT84M50L

Single die MOSFET

FEATURES

TYPICAL APPLICATIONS

• PFC and other boost converter

• Fast switching with low EMI/RFI

• Buck converter

• Low R_DS(on)

• Two switch forward (asymmetrical bridge)

• Single switch forward

• Flyback

• Ultra low C_rssfor improved noise immunity

• Low gate charge

• Avalanche energy rated

• RoHS compliant

• Inverters

Absolute Maximum Ratings

Symbol Parameter

Unit

Ratings

Continuous Drain Current @ T_C= 25°C

I_D

Continuous Drain Current @ T_C= 100°C

Pulsed Drain Current ¹

I_DM

V_GS

E_AS

I_AR

270

Gate-Source Voltage

Single Pulse Avalanche Energy ²

Avalanche Current, Repetitive or Non-Repetitive

1845

Thermal and Mechanical Characteristics

Symbol Characteristic

Min

Typ

Max

1135

0.11

Unit

P_D

Total Power Dissipation @ T_C= 25°C

R_θJC

Junction to Case Thermal Resistance

°C/W

°C

R_θCS

0.11

Case to Sink Thermal Resistance, Flat, Greased Surface

T_J,T_STG

-55

150

300

Operating and Storage Junction Temperature Range

T_L

Soldering Temperature for 10 Seconds (1.6mm from case)

0.22

6.2

W_T

Package Weight

in·lbf

N·m

Torque

Mounting Torque ( TO-264 Package), 4-40 or M3 screw

1.1

MicrosemiWebsite-http://www.microsemi.com

12 3 4

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