Datasheet > APT5024CLL

APT5024CLL

更新时间： 2024-11-29 14:49:55

品牌	Logo	应用领域
美高森美 - MICROSEMI		/
页数	文件大小	规格书
4页	135K
描述
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET

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技术参数
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APT5024CLL 技术参数

生命周期：	Obsolete	零件包装代码：	TO-254AA
包装说明：	,	针数：	3
Reach Compliance Code：	compliant	风险等级：	5.64
配置：	Single	最大漏极电流 (Abs) (ID)：	17 A
FET 技术：	METAL-OXIDE SEMICONDUCTOR	工作模式：	ENHANCEMENT MODE
最高工作温度：	150 °C	极性/信道类型：	N-CHANNEL
最大功率耗散 (Abs)：	180 W	子类别：	FET General Purpose Power
表面贴装：	NO	Base Number Matches：	1

APT5024CLL 数据手册

APT5024CLL

500V 17A 0.270Ω

POWER MOS 7 MOSFET

TO-254

Power MOS 7^®is a new generation of low loss, high voltage, N-Channel

enhancement mode power MOSFETS. Both conduction and switching

losses are addressed with Power MOS 7^®by significantly lowering R_DS(ON)

and Q_g. Power MOS 7^®combines lower conduction and switching losses

along with exceptionally fast switching speeds inherent with APT's

patented metal gate structure.

• Lower Input Capacitance

• Lower Miller Capacitance

• Lower Gate Charge, Qg

• IncreasedPowerDissipation

• Easier To Drive

• Hermetic TO-254 Package

MAXIMUM RATINGS

Symbol Parameter

All Ratings: T = 25°C unless otherwise specified.

APT5014HLL

UNIT

V_DSS

I_D

Drain-Source Voltage

500

Volts

Continuous Drain Current @ T_C= 25°C

Amps

Volts

I_DM

Pulsed Drain Current

V_GS

V_GSM

Gate-Source Voltage Continuous

Gate-Source Voltage Transient

Total Power Dissipation @ T_C= 25°C

Linear Derating Factor

±30

±40

180

Watts

W/°C

P_D

1.43

-55 to 150

300

T_J,T_STG

T_L

Operating and Storage Junction Temperature Range

°C

Amps

Lead Temperature: 0.063" from Case for 10 Sec.

I_AR

Avalanche Current

(Repetitive and Non-Repetitive)

E_AR

E_AS

Repetitive Avalanche Energy

Single Pulse Avalanche Energy

960

STATICELECTRICALCHARACTERISTICS

Symbol Characteristic / Test Conditions

MIN

TYP

MAX

UNIT

Volts

Ohms

BV_DSS

R_DS(on)

Drain-Source Breakdown Voltage (V_GS= 0V, I_D= 250µA)

500

Drain-Source On-State Resistance

(V_GS= 10V, I_D= 8.5A)

0.27

100

500

±100

Zero Gate Voltage Drain Current (V_DS= 500V, V_GS= 0V)

Zero Gate Voltage Drain Current (V_DS= 400V, V_GS= 0V, T_C= 125°C)

Gate-Source Leakage Current (V_GS= ±30V, V_DS= 0V)

Gate Threshold Voltage (V_DS= V_GS, I_D= 1mA)

I_DSS

µA

I_GSS

V_GS(th)

Volts

CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.

APT Website - http://www.advancedpower.com

12 3 4

中文翻译

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与APT5024CLL相关器件

型号	品牌	获取价格	描述	数据表
APT5024SFLL	ADPOW	获取价格	Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode po
APT5024SFLL	MICROSEMI	获取价格	Power Field-Effect Transistor, 22A I(D), 500V, 0.24ohm, 1-Element, N-Channel, Silicon, Met
APT5024SFLLG	MICROSEMI	获取价格	Power Field-Effect Transistor, 22A I(D), 500V, 0.24ohm, 1-Element, N-Channel, Silicon, Met
APT5024SLL	ADPOW	获取价格	POWER MOS 7 MOSFET
APT5024SLLG	MICROSEMI	获取价格	Power Field-Effect Transistor, 22A I(D), 500V, 0.24ohm, 1-Element, N-Channel, Silicon, Met
APT5024SVFR	ADPOW	获取价格	暂无描述
APT5024SVFRG	MICROSEMI	获取价格	Power Field-Effect Transistor, 22A I(D), 500V, 0.24ohm, 1-Element, N-Channel, Silicon, Met
APT5024SVR	MICROSEMI	获取价格	Power Field-Effect Transistor, 22A I(D), 500V, 0.24ohm, 1-Element, N-Channel, Silicon, Met
APT5024SVR	ADPOW	获取价格	Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
APT5024SVRG	MICROSEMI	获取价格	Power Field-Effect Transistor, 22A I(D), 500V, 0.24ohm, 1-Element, N-Channel, Silicon, Met

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