APT5024SVR

更新时间： 2024-11-28 22:16:47

品牌	Logo	应用领域
ADPOW		高压
页数	文件大小	规格书
2页	36K
描述
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

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APT5024SVR 数据手册

APT5024SVR

500V 22A 0.240Ω

POWER MOS V^®

PowerMOSVisanewgenerationofhighvoltageN-Channelenhancement

mode power MOSFETs. This new technology minimizes the JFET effect,

increases packing density and reduces the on-resistance. Power MOS V

also achieves faster switching speeds through optimized gate layout.

D³PAK

• Faster Switching

• Lower Leakage

• 100% Avalanche Tested

• Surface Mount D³PAK Package

MAXIMUM RATINGS

Symbol Parameter

All Ratings: T = 25°C unless otherwise specified.

APT5024SVR

500

UNIT

V_DSS

I_D

Drain-Source Voltage

Volts

Continuous Drain Current @ T_C= 25°C

Amps

Volts

I_DM

Pulsed Drain Current

Y₈₈

V_GS

V_GSM

Gate-Source Voltage Continuous

Gate-Source Voltage Transient

±20

±30

Watts

Total Power Dissipation @ T_C= 25°C

Linear Derating Factor

280

P_D

2.24

W/°C

T_J,T_STG

T_L

Operating and Storage Junction Temperature Range

-55 to 150

300

°C

Amps

Lead Temperature: 0.063" from Case for 10 Sec.

I_AR

Avalanche Current

(Repetitive and Non-Repetitive)

E_AR

E_AS

Repetitive Avalanche Energy

Single Pulse Avalanche Energy

1210

STATIC ELECTRICAL CHARACTERISTICS

Symbol Characteristic / Test Conditions

MIN

TYP

MAX

UNIT

Volts

Amps

PRELIMINAR

BV_DSS

I_D(on)

Drain-Source Breakdown Voltage (V_GS= 0V, I_D= 250µA)

500

On State Drain Current

(V_DS> I_D(on)x R_DS(on)Max, V_GS= 10V)

R_DS(on)

Drain-Source On-State Resistance

(V_GS= 10V, 0.5 I_D[Cont.])

Ohms

0.24

Zero Gate Voltage Drain Current (V_DS= V_DSS, V_GS= 0V)

I_DSS

µA

Zero Gate Voltage Drain Current (V_DS= 0.8 V_DSS, V_GS= 0V, T_C= 125°C)

Gate-Source Leakage Current (V_GS= ±20V, V_DS= 0V)

Gate Threshold Voltage (V_DS= V_GS, I_D= 1.0mA)

250

I_GSS

±100

V_GS(th)

Volts

CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.

USA

405 S.W. Columbia Street

EUROPE

Bend, Oregon 97702-1035

F-33700 Merignac - France

Phone: (541) 382-8028

Phone: (33) 5 57 92 15 15

FAX: (541) 388-0364

FAX: (33) 556 47 97 61

Avenue J.F. Kennedy Bât B4 Parc Cadéra Nord

中文翻译

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与APT5024SVR相关器件

型号	品牌	获取价格	描述	数据表
APT5024SVRG	MICROSEMI	获取价格	Power Field-Effect Transistor, 22A I(D), 500V, 0.24ohm, 1-Element, N-Channel, Silicon, Met
APT5025AN	ADPOW	获取价格	N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
APT5025BN	ADPOW	获取价格	N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
APT5025BN-BUTT	MICROSEMI	获取价格	23A, 500V, 0.25ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247
APT5025BN-GULLWING	MICROSEMI	获取价格	23A, 500V, 0.25ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247, TO-247, 3 PIN
APT5025BN-GULLWING	ADPOW	获取价格	Power Field-Effect Transistor, 23A I(D), 500V, 0.25ohm, 1-Element, N-Channel, Silicon, Met
APT5025BNR	ETC	获取价格	TRANSISTOR \| MOSFET \| N-CHANNEL \| 500V V(BR)DSS \| 23A I(D) \| TO-247AD
APT5025BNR-BUTT	ADPOW	获取价格	Power Field-Effect Transistor, 23A I(D), 500V, 0.25ohm, 1-Element, N-Channel, Silicon, Met
APT5025BNR-GULLWING	MICROSEMI	获取价格	Power Field-Effect Transistor, 23A I(D), 500V, 0.25ohm, 1-Element, N-Channel, Silicon, Met
APT5025CN	ADPOW	获取价格	Transistor

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