1
3
2
1- Cathode 1
2- Anode 1
Cathode 2
APT10SC60BHB 600V 2X8A
3- Anode 2
1
2
3
SILICON CARBIDE SCHOTTKY RECTIFIER DIODE
PRODUCT FEATURES
PRODUCT BENEFITS
PRODUCT APPLICATIONS
• Schottky Barrier
Majority Carrier Only
• Wide Energy Gap
• High Breakdown Electric
Field
• High Thermal Conductivity
• High Pulse Capability
• Positive Vf Temp Coefficient
• Low Forward Voltage
• No dv/dt Limitation
• Popular TO-247 Package
• Switching Losses Nearly
Eliminated zero recoveryTM
• Greatly Reduced Turn On Loss
• Improved Overall Efficiency
• Enables Higher Freq. Operation
• Simplify Or Eliminate Snubber
Circuits
• High Temperature Operation
• Low Leakage Current
• Radiation Hardness
• High Power Density
• Output Rectifier
• Hard Or Soft Switched
Topologies
• High Frequency
High Performance
• Thermally Stable Paralleling
MAXIMUMRATINGS
All Ratings Are Per Leg: T = 25°C unless otherwise specified.
C
APT10SC60BHB
Symbol Characteristic / Test Conditions
UNIT
VR
Maximum D.C. Reverse Voltage
VRRM
VRWM
IF(AV)
Maximum Peak Repetitive Reverse Voltage
Maximum Working Peak Reverse Voltage
Maximum Average Forward Current (TC =100°C, Duty Cycle = 0.5)
RMS Forward Current (Square wave, 50% duty)
Non-Repetitive Forward Surge Current (TJ = 25°C, tp = 10µs)
Power Dissipation (TC = 25°C)
600
Volts
8
11
Amps
IF(RMS)
IFSM
250
PTOT
TJ,TSTG
TL
Watts
°C
53
Operating and StorageTemperature Range
-55 to 175
300
Lead Temperature for 10 Sec.
STATIC ELECTRICAL CHARACTERISTICS
Symbol
MIN
TYP
1.6
2.4
2.2
MAX
UNIT
IF = 10A, TJ = 25°C
1.8
VF
Forward Voltage
IF = 20A, TJ = 25°C
Volts
IF = 10A, TJ = 175°C
VR = VR Rated, TJ = 25°C
VR = VR Rated, TJ = 175°C
2.4
200
IRM
Maximum Reverse Leakage Current
µA
1000
APT Website - http://www.advancedpower.com
zero recoveryTM, is a Trademark of CREE INC.