DYNAMIC CHARACTERISTICS
APT10SC120B_S
Characteristic / Test Conditions
Symbol
MIN
TYP
100
56
MAX
UNIT
pF
C
QC
tfr
Capacitance (VR = 400V, TC = 25°C, F = 1 MHz)
Total Capacitive Charge (VR = 1200V, IF = 10A, diF/dt = 500A/µs, TC = 25°C)
Forward Recovery Time 1
-
nC
-
N/A
N/A
ns
1
trr
Reverse Recovery Time
dv
/
V/ns
Peak Diode Recovery (VR = 960V, di/dt = 1000A/µs, TC = 25°C)
50
dt
THERMAL AND MECHANICAL CHARACTERISTICS
Symbol Characteristic / Test Conditions
MIN
TYP
MAX
0.67
40
UNIT
RθJC
RθJA
Junction-to-Case Thermal Resistance
Junction-to-Ambient Thermal Resistance
°C/W
0.22
5.9
oz
g
WT
Package Weight
10
lb•in
N•m
Torque Maximum Mounting Torque
1.1
1 As a majority carrier device, there is no reverse recovery charge.
APTReservestheright tochange, without notice, thespecificationsandinformationcontainedherein.
0.70
0.9
0.60
0.50
0.7
0.40
0.5
Note:
0.30
t
1
0.3
0.20
t
2
t
1
Duty Factor D =
/
t
0.10
0
0.1
2
SINGLEPULSE
10-3
Peak T = P
x Z + T
J
DM
θJC C
0.05
10-5
10-4
10-2
10-1
1.0
RECTANGULARPULSEDURATION(seconds)
FIGURE1a.MAXIMUMEFFECTIVETRANSIENTTHERMALIMPEDANCE,JUNCTION-TO-CASEvs.PULSEDURATION
RC MODEL
Junction
temp(°C)
0.458 °C/W
0.212 °C/W
0.00260 J/°C
0.134 J/°C
Power
(watts)
Case temperature(°C)
FIGURE1b,TRANSIENT THERMAL IMPEDANCE MODEL