生命周期: | Obsolete | 零件包装代码: | TO-247 |
包装说明: | FLANGE MOUNT, R-PSFM-G3 | 针数: | 3 |
Reach Compliance Code: | unknown | 风险等级: | 5.74 |
外壳连接: | DRAIN | 配置: | SINGLE WITH BUILT-IN DIODE |
最小漏源击穿电压: | 1000 V | 最大漏极电流 (ID): | 4.4 A |
最大漏源导通电阻: | 4 Ω | FET 技术: | METAL-OXIDE SEMICONDUCTOR |
最大反馈电容 (Crss): | 60 pF | JESD-30 代码: | R-PSFM-G3 |
元件数量: | 1 | 端子数量: | 3 |
工作模式: | ENHANCEMENT MODE | 最高工作温度: | 150 °C |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | FLANGE MOUNT | 极性/信道类型: | N-CHANNEL |
功耗环境最大值: | 180 W | 最大脉冲漏极电流 (IDM): | 17.6 A |
认证状态: | Not Qualified | 表面贴装: | YES |
端子形式: | GULL WING | 端子位置: | SINGLE |
晶体管元件材料: | SILICON | 最大关闭时间(toff): | 77 ns |
最大开启时间(吨): | 43 ns | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
APT1004RBNR | ETC |
获取价格 |
TRANSISTOR | MOSFET | N-CHANNEL | 1KV V(BR)DSS | 4.4A I(D) | TO-247AD | |
APT1004RCN | ADPOW |
获取价格 |
N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS | |
APT1004RDN | ADPOW |
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Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET | |
APT1004RGN | ADPOW |
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N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS | |
APT1004RKN | ADPOW |
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N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS | |
APT10050B2FLC | ADPOW |
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Power Field-Effect Transistor, 21A I(D), 1000V, 0.5ohm, 1-Element, N-Channel, Silicon, Met | |
APT10050B2LC | MICROSEMI |
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21A, 1000V, 0.5ohm, N-CHANNEL, Si, POWER, MOSFET, TMAX-3 | |
APT10050B2LC | ADPOW |
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Power MOS VITM is a new generation of low gate charge, high voltage | |
APT10050B2VFR | ADPOW |
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Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. | |
APT10050B2VFR_04 | ADPOW |
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Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. |