生命周期: | Obsolete | 包装说明: | , |
Reach Compliance Code: | unknown | 风险等级: | 5.84 |
Is Samacsys: | N | 配置: | Single |
FET 技术: | METAL-OXIDE SEMICONDUCTOR | 工作模式: | ENHANCEMENT MODE |
极性/信道类型: | N-CHANNEL | 子类别: | FET General Purpose Power |
表面贴装: | YES | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
APT1004RGN | ADPOW |
获取价格 |
N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS |
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APT1004RKN | ADPOW |
获取价格 |
N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS |
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APT10050B2FLC | ADPOW |
获取价格 |
Power Field-Effect Transistor, 21A I(D), 1000V, 0.5ohm, 1-Element, N-Channel, Silicon, Met |
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APT10050B2LC | MICROSEMI |
获取价格 |
21A, 1000V, 0.5ohm, N-CHANNEL, Si, POWER, MOSFET, TMAX-3 |
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APT10050B2LC | ADPOW |
获取价格 |
Power MOS VITM is a new generation of low gate charge, high voltage |
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APT10050B2VFR | ADPOW |
获取价格 |
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. |
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APT10050B2VFR_04 | ADPOW |
获取价格 |
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. |
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APT10050B2VR | ADPOW |
获取价格 |
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. |
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APT10050B2VRG | MICROSEMI |
获取价格 |
Power Field-Effect Transistor, 21A I(D), 1000V, 0.5ohm, 1-Element, N-Channel, Silicon, Met |
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APT10050CFN | ETC |
获取价格 |
TRANSISTOR | MOSFET POWER MODULE | INDEPENDENT | 1KV V(BR)DSS | 24.5A I(D) |
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