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AP9685M PDF预览

AP9685M

更新时间: 2024-10-27 21:53:59
品牌 Logo 应用领域
其他 - ETC /
页数 文件大小 规格书
4页 75K
描述
N-CHANNEL ENHANCEMENT MODE POWER MOSFET

AP9685M 数据手册

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AP9685M  
Advanced Power  
Electronics Corp.  
N-CHANNEL ENHANCEMENT MODE  
POWER MOSFET  
Simple Drive Requirement  
BVDSS  
RDS(ON)  
ID  
80V  
45mΩ  
5.3A  
D
D
Lower Gate Charge  
D
D
Fast Switching Characteristic  
G
S
S
SO-8  
S
Description  
D
S
The Advanced Power MOSFETs from APEC provide the  
designer with the best combination of fast switching,  
ruggedized device design, low on-resistance and cost-effectiveness.  
G
The SO-8 package is universally preferred for all commercial-industrial  
surface mount applications and suited for low voltage applications  
such as DC/DC converters.  
Absolute Maximum Ratings  
Symbol  
Parameter  
Rating  
80  
Units  
V
VDS  
VGS  
Drain-Source Voltage  
± 20  
Gate-Source Voltage  
V
ID@TA=25  
ID@TA=100℃  
IDM  
Continuous Drain Current3  
Continuous Drain Current3  
Pulsed Drain Current1  
5.3  
A
3.4  
A
50  
A
PD@TA=25℃  
Total Power Dissipation  
2.5  
W
Linear Derating Factor  
0.02  
W/℃  
TSTG  
TJ  
Storage Temperature Range  
Operating Junction Temperature Range  
-55 to 150  
-55 to 150  
Thermal Data  
Symbol  
Parameter  
Value  
50  
Unit  
Rthj-a  
Thermal Resistance Junction-ambient3  
Max.  
/W  
Data and specifications subject to change without notice  
201216031  

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