Datasheet > AP9912J

AP9912J

更新时间： 2024-10-28 08:32:11

品牌	Logo	应用领域
富鼎先进 - A-POWER		/
页数	文件大小	规格书
6页	84K
描述
N-CHANNEL ENHANCEMENT MODE

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中文翻译

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数据手册

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AP9912J 数据手册

AP9912H/J

Advanced Power

Electronics Corp.

N-CHANNEL ENHANCEMENT MODE

POWER MOSFET

▼ Simple Drive Requirement

BV_DSS

R_DS(ON)

I_D

20V

85mΩ

10A

▼ Low Gate Charge

▼ Fast Switching

Description

The Advanced Power MOSFETs from APEC provide the

designer with the best combination of fast switching,

TO-252(H)

ruggedized device design, low on-resistance and cost-effectiveness.

The TO-252 package is universally preferred for all commercial-

industrial surface mount applications and suited for low voltage

applications such as DC/DC converters. The through-hole version

(AP9912J) are available for low-profile applications.

TO-251(J)

Absolute Maximum Ratings

Symbol

Parameter

Rating

Units

V_DS

V_GS

Drain-Source Voltage

Gate-Source Voltage

± 12

Continuous Drain Current, V_GS@ 4.5V

I_D@T_A=25℃

I_D@T_A=100℃

I_DM

Continuous Drain Current, V_GS@ 4.5V

Pulsed Drain Current¹

P_D@T_A=25℃

Total Power Dissipation

Linear Derating Factor

0.144

-55 to 150

W/℃

℃

T_STG

T_J

Storage Temperature Range

Operating Junction Temperature Range

Thermal Data

Symbol

Parameter

Value

6.6

Unit

℃/W

Rthj-c

Thermal Resistance Junction-case

Thermal Resistance Junction-ambient

Max.

Rthj-a

110

Data and specifications subject to change without notice

200110031

12 3 4 5 6

中文翻译

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