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AP97T07GP-HF PDF预览

AP97T07GP-HF

更新时间: 2024-11-18 12:52:11
品牌 Logo 应用领域
富鼎先进 - A-POWER 晶体晶体管功率场效应晶体管开关脉冲局域网
页数 文件大小 规格书
4页 100K
描述
N-CHANNEL ENHANCEMENT MODE POWER MOSFET

AP97T07GP-HF 技术参数

是否Rohs认证: 符合生命周期:Contact Manufacturer
零件包装代码:TO-220AB包装说明:FLANGE MOUNT, R-PSFM-T3
针数:3Reach Compliance Code:compliant
ECCN代码:EAR99风险等级:5.68
Is Samacsys:N配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:75 V最大漏极电流 (ID):120 A
最大漏源导通电阻:0.0036 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码:TO-220ABJESD-30 代码:R-PSFM-T3
元件数量:1端子数量:3
工作模式:ENHANCEMENT MODE最高工作温度:175 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:N-CHANNEL最大脉冲漏极电流 (IDM):880 A
认证状态:Not Qualified表面贴装:NO
端子形式:THROUGH-HOLE端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

AP97T07GP-HF 数据手册

 浏览型号AP97T07GP-HF的Datasheet PDF文件第2页浏览型号AP97T07GP-HF的Datasheet PDF文件第3页浏览型号AP97T07GP-HF的Datasheet PDF文件第4页 
AP97T07GP-HF  
Halogen-Free Product  
Advanced Power  
Electronics Corp.  
N-CHANNEL ENHANCEMENT MODE  
POWER MOSFET  
D
S
Simple Drive Requirement  
BVDSS  
RDS(ON)  
ID  
75V  
3.6mΩ  
220A  
Lower On-resistance  
RoHS Compliant & Halogen-Free  
G
Description  
Advanced Power MOSFETs from APEC provide the  
designer with the best combination of fast switching,  
ruggedized device design, low on-resistance and cost-effectiveness.  
G
TO-220(P)  
D
S
The TO-220 package is widely preferred for commercial-industrial  
through-hole applications.  
Absolute Maximum Ratings  
Symbol  
Parameter  
Rating  
75  
Units  
V
VDS  
VGS  
Drain-Source Voltage  
Gate-Source Voltage  
+20  
V
Continuous Drain Current, VGS @ 10V(Silicon Limited)  
Continuous Drain Current, VGS @ 10V(Silicon Limited)  
Continuous Drain Current, VGS @ 10V(Package Limited)  
ID@TC=25℃  
ID@TC=100℃  
ID@TC=25℃  
IDM  
220  
A
150  
A
120  
A
Pulsed Drain Current1  
880  
A
PD@TC=25℃  
TSTG  
Total Power Dissipation  
375  
W
Storage Temperature Range  
Operating Junction Temperature Range  
-55 to 175  
-55 to 175  
TJ  
Thermal Data  
Symbol  
Parameter  
Value  
Units  
/W  
/W  
Rthj-c  
Maximum Thermal Resistance, Junction-case  
Maixmum Thermal Resistance, Junction-ambient  
0.4  
62  
Rthj-a  
Data and specifications subject to change without notice  
1
200907281  

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