Datasheet > AP9915GK

AP9915GK

更新时间： 2024-10-28 08:32:11

品牌	Logo	应用领域
富鼎先进 - A-POWER		/
页数	文件大小	规格书
4页	96K
描述
N-CHANNEL ENHANCEMENT MODE POWER MOSFET

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

AP9915GK 数据手册

AP9915GK

Pb Free Plating Product

Advanced Power

Electronics Corp.

N-CHANNEL ENHANCEMENT MODE

POWER MOSFET

▼ Simple Drive Requirement

BV_DSS

R_DS(ON)

I_D

20V

50mΩ

6.2A

▼ Lower Gate Charge

▼ Fast Switching Characteristic

▼ RoHS Compliant

SOT-223

Description

The Advanced Power MOSFETs from APEC provide the

designer with the best combination of fast switching,

low on-resistance and cost-effectiveness.

Absolute Maximum Ratings

Symbol

Parameter

Rating

Units

V_DS

V_GS

Drain-Source Voltage

Gate-Source Voltage

±12

I_D@T_A=25℃

I_D@T_A=70℃

I_DM

Continuous Drain Current³

Pulsed Drain Current¹

6.2

P_D@T_A=25℃

Total Power Dissipation

Linear Derating Factor

Storage Temperature Range

3.2

0.025

-55 to 150

W/℃

℃

T_STG

T_J

Operating Junction Temperature Range

Thermal Data

Symbol

Parameter

Value

Unit

Rthj-a

Thermal Resistance Junction-ambient³

Max.

℃/W

Data and specifications subject to change without notice

200615051-1/4

12 3 4

中文翻译

下载PDF

与AP9915GK相关器件

型号	品牌	获取价格	描述	数据表
AP9915H	A-POWER	获取价格	N-CHANNEL ENHANCEMENT MODE POWER MOSFET
AP9915J	A-POWER	获取价格	N-CHANNEL ENHANCEMENT MODE POWER MOSFET
AP9915K	ETC	获取价格	N CHANNEL ENHANCEMENT MODE POWER MOSFET
AP9916GH	A-POWER	获取价格	Low on-resistance, Capable of 2.5V gate drive
AP9916GJ	A-POWER	获取价格	Low on-resistance, Capable of 2.5V gate drive
AP9916H	A-POWER	获取价格	N-CHANNEL ENHANCEMENT MODE
AP9916J	A-POWER	获取价格	N-CHANNEL ENHANCEMENT MODE
AP9918GH	A-POWER	获取价格	Low on-resistance, Capable of 2.5V gate drive
AP9918GJ	A-POWER	获取价格	Low on-resistance, Capable of 2.5V gate drive
AP9918H	A-POWER	获取价格	N-CHANNEL ENHANCEMENT MODE POWER MOSFET