Datasheet > AP98T03PS

AP98T03PS

更新时间： 2024-10-29 03:23:39

品牌	Logo	应用领域
富鼎先进 - A-POWER		/
页数	文件大小	规格书
4页	97K
描述
TRANSISTOR POWER, FET, FET General Purpose Power

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数据手册

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AP98T03PS 数据手册

AP98T03GP/S

RoHS-compliant Product

Advanced Power

Electronics Corp.

N-CHANNEL ENHANCEMENT MODE

POWER MOSFET

▼ Simple Drive Requirement

BV_DSS

R_DS(ON)

I_D

30V

2.8mΩ

200A

▼ Ultra-low On-resistance

▼ Fast Switching Characteristic

Description

Advanced Power MOSFETs from APEC provide the designer with the

best combination of fast switching, ruggedized device design, low on-

resistance and cost-effectiveness.

TO-220(P)

TO-263(S)

The TO-263 package is widely preferred for commercial-industrial

surface mount applications and suited for low voltage applications such

as DC/DC converters. The through-hole version (AP98T03GP) are

available for low-profile applications.

Absolute Maximum Ratings

Symbol

Parameter

Rating

Units

V_DS

V_GS

Drain-Source Voltage

Gate-Source Voltage

Continuous Drain Current, V_GS@ 10V³

+20

200

125

800

156

1.25

I_D@T_C=25℃

I_D@T_C=100℃

I_DM

Continuous Drain Current, V_GS@ 10V

Pulsed Drain Current¹

P_D@T_C=25℃

Total Power Dissipation

Linear Derating Factor

W/℃

℃

T_STG

T_J

Storage Temperature Range

Operating Junction Temperature Range

-55 to 150

Thermal Data

Symbol

Parameter

Value

0.8

Units

℃/W

Rthj-c

Maximum Thermal Resistance, Junction-case

Maximum Thermal Resistance, Junction-ambient (PCB mount)⁴

Rthj-a

Maximum Thermal Resistance, Junction-ambient

Data and specifications subject to change without notice

201203234

12 3 4

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