Datasheet > AP5322GM-HF

AP5322GM-HF

更新时间： 2024-11-25 12:52:11

品牌	Logo	应用领域
富鼎先进 - A-POWER		/
页数	文件大小	规格书
4页	101K
描述
N-CHANNEL ENHANCEMENT MODE POWER MOSFET

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数据手册

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AP5322GM-HF 数据手册

AP5322GM-HF

Halogen-Free Product

Advanced Power

Electronics Corp.

DUAL N-CHANNEL ENHANCEMENT

MODE POWER MOSFET

▼ Lower Gate Charge

BV_DSS

R_DS(ON)

I_D

100V

250mΩ

1.9A

▼ Simple Drive Requirement

▼ Fast Switching Characteristic

▼ Halogen Free & RoHS Compliant

SO-8

Description

Advanced Power MOSFETs from APEC provide the designer with

the best combination of fast switching, ruggedized device design,

ultra low on-resistance and cost-effectiveness.

Absolute Maximum Ratings

Symbol

Parameter

Rating

Units

V_DS

V_GS

Drain-Source Voltage

100

Gate-Source Voltage

+20

Continuous Drain Current³, V_GS@ 10V

Pulsed Drain Current¹

I_D@T_A=25℃

I_D@T_A=70℃

I_DM

1.9

1.5

P_D@T_A=25℃

T_STG

Total Power Dissipation

℃

Storage Temperature Range

Operating Junction Temperature Range

-55 to 150

T_J

Thermal Data

Symbol

Parameter

Value

62.5

Unit

Rthj-a

Maximum Thermal Resistance, Junction-ambient³

℃/W

Data and specifications subject to change without notice

201201101

12 3 4

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