Datasheet > AP55T10GH

AP55T10GH

更新时间： 2024-11-26 17:15:31

品牌	Logo	应用领域
富鼎先进 - A-POWER		/
页数	文件大小	规格书
5页	61K
描述
TO-252

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中文翻译

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数据手册

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AP55T10GH 数据手册

AP55T10GH-HF

Halogen-Free Product

Advanced Power

Electronics Corp.

N-CHANNEL ENHANCEMENT MODE

POWER MOSFET

▼ Simple Drive Requirement

BV_DSS

R_DS(ON)

I_D

100V

16.5mΩ

56A

▼ Lower Gate Charge

▼ Fast Switching Characteristic

▼ RoHS Compliant & Halogen-Free

Description

AP55T10 series are from Advanced Power innovated design and

silicon process technology to achieve the lowest possible on-

resistance and fast switching performance. It provides the designer

with an extreme efficient device for use in a wide range of power

applications.

TO-252(H)

The TO-252 package is widely preferred for all commercial-industrial

surface mount applications using infrared reflow technique and

suited for high current application due to the low connection

resistance.

Absolute Maximum Ratings@T_j=25^oC(unless otherwise specified)

Symbol

Parameter

Drain-Source Voltage

Rating

100

Units

V_DS

V_GS

Gate-Source Voltage

+20

Drain Current, V_GS@ 10V

Pulsed Drain Current¹

I_D@T_C=25℃

I_D@T_C=100℃

I_DM

160

P_D@T_C=25℃

P_D@T_A=25℃

T_STG

Total Power Dissipation

125

℃

Total Power Dissipation

Storage Temperature Range

Operating Junction Temperature Range

-55 to 175

T_J

Thermal Data

Symbol

Parameter

Value

Units

℃/W

Rthj-c

Maximum Thermal Resistance, Junction-case

Maximum Thermal Resistance, Junction-ambient (PCB mount)³

1.2

Rthj-a

62.5

Data and specifications subject to change without notice

201501293

12 3 4 5

中文翻译

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