Datasheet > AP55T10GI

AP55T10GI

更新时间： 2024-11-26 17:15:31

品牌	Logo	应用领域
富鼎先进 - A-POWER		/
页数	文件大小	规格书
5页	55K
描述
TO-220CFM

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数据手册

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AP55T10GI 数据手册

AP55T10GI-HF

Halogen-Free Product

Advanced Power

Electronics Corp.

N-CHANNEL ENHANCEMENT MODE

POWER MOSFET

▼ Simple Drive Requirement

BV_DSS

R_DS(ON)

I_D

100V

16.5mΩ

31.7A

▼ Lower Gate Charge

▼ Fast Switching Characteristics

▼ RoHS Compliant & Halogen-Free

Description

AP55T10 series are from Advanced Power innovated design and silicon

process technology to achieve the lowest possible on-resistance and fast

switching performance. It provides the designer with an extreme efficient

device for use in a wide range of power applications.

TO-220CFM(I)

The TO-220CFM package is widely preferred for all commercial-industrial

through hole applications. The mold compound provides a high isolation

voltage capability and low thermal resistance between the tab and the

external heat-sink.

Absolute Maximum Ratings@T_j=25^oC(unless otherwise specified)

Symbol

Parameter

Drain-Source Voltage

Rating

100

Units

V_DS

V_GS

Gate-Source Voltage

+20

Drain Current, V_GS@ 10V

Pulsed Drain Current¹

I_D@T_C=25℃

I_D@T_C=100℃

I_DM

31.7

120

P_D@T_C=25℃

P_D@T_A=25℃

T_STG

Total Power Dissipation

36.7

℃

Total Power Dissipation

1.92

Storage Temperature Range

Operating Junction Temperature Range

-55 to 150

T_J

Thermal Data

Symbol

Parameter

Value

Units

℃/W

Rthj-c

Maximum Thermal Resistance, Junction-case

Maximum Thermal Resistance, Junction-ambient

3.4

Rthj-a

Data and specifications subject to change without notice

201501292

12 3 4 5

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