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AP562_15

更新时间： 2024-01-24 20:59:39
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描述
3.3-3.8 GHz WiMAX 8W Power Amplifier

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AP562  
3.3-3.8 GHz WiMAX 8W Power Amplifier  
Product Features  
Product Description  
Functional Diagram  
The AP562 is a high dynamic range broadband power  
amplifier in a surface mount package. The single-stage  
amplifier has 11.5 dB gain, while being able to achieve  
high performance for 3.3–3.8 GHz WiMAX applications  
with up to 39.4 dBm of compressed 1dB power.  
• 3.3 – 3.8 GHz  
• +39.4 dBm P1dB  
• 11.5 dB Gain  
• 2.0% EVM @ 30 dBm Pout  
• +12 V Supply Voltage  
The AP562 uses a high reliability +12V InGaP/GaAs HBT  
process technology. The device incorporates proprietary  
bias circuitry to compensate for variations in linearity and  
current draw over temperature. The device does not require  
any negative bias voltage; an internal active bias allows the  
AP562 to operate directly off a commonly used +12V  
supply and has the added feature of a +5V power down  
control pin. RoHS-compliant 5x6mm DFN package is  
surface mountable to allow for low manufacturing costs to  
the end user.  
• Lead-free/green/RoHS-compliant  
5x6 mm power DFN package  
Function  
RFIN  
Pin No.  
4,5,6  
Applications  
RFOUT  
IREF  
9,10,11  
14  
• WiMAX CPE/BTS  
VBIAS  
NC  
1
2,3,7,8,12,13  
The AP562 is targeted for use in a balanced or single ended  
configuration for WiMAX applications where high linearity  
and high power is required.  
Specifications  
Typical Performance  
Parameter  
Test Frequency  
Channel Power  
Power Gain  
Input Return Loss  
Output Return Loss  
Error Vector Magnitude  
Operating Current, Icc  
Collector Efficiency  
Output P1dB  
Units  
Typical  
Parameter  
Units Min Typ Max  
GHz  
dBm  
dB  
dB  
dB  
%
mA  
%
dBm  
mA  
V
3.4  
+30  
11.5  
11  
5.6  
2.2  
720  
11.1  
39.5  
3.5  
+30  
11.5  
15  
6.7  
1.9  
685  
11.7  
39.4  
400  
+5  
3.6  
Operational Bandwidth  
Test Frequency  
Output Channel Power  
Power Gain  
Input Return Loss  
Output Return Loss  
Error Vector Magnitude  
Operating Current, Icc  
RF Switching Speed  
Collector Efficiency  
Output P1dB  
GHz  
GHz  
dBm  
dB  
3.3  
3.8  
+30  
11.3  
15  
5.9  
1.7  
670  
12.2  
38.7  
3.5  
+30  
11.5  
15  
dB  
dB  
6.7  
%
1.9  
mA  
ns  
685  
50  
Quiescent Current, Icq  
Vpd  
Vcc  
%
11.7  
39.4  
400  
+5  
dBm  
mA  
V
V
+12  
Quiescent Current, Icq  
Vpd(4)  
Vcc  
V
+12  
Notes:  
1. Test conditions unless otherwise noted: T = 25ºC, Vpd = +5V, Vcc = +12, Icq = 400mA at Pout = +30  
dBm and f = 3.5 GHz.  
2. Using an 802.16-2004 OFDMA, 64QAM-1/2,1024-FFT, 20 symbols, 30 subchannels signal, 9.5 dB  
PAR @ 0.01%.  
3. Switching speed: 50% TTL to 100/0% RF.  
4. Vpd used for device power down. (low=RF off)  
5. Capable of handling 10:1 VSWR @ 12 VDC, WiMax signal, PoutAVG = 30dBm.  
Absolute Maximum Rating  
Parameter  
Rating  
+33 dBm  
-55 to +125 ºC  
158 ºC  
Ordering Information  
Pin max (CW into 50Ω load)  
Storage Temperature  
Part No.  
Description  
WiMAX 12V 8W HBT Amplifier  
Max Junction Temperature, TJ,max  
AP562-F  
AP562-PCB3500 3.4-3.6 GHz Fully Assembled Evaluation Board  
8.4 °C / W  
Thermal Resistance, ΘJC  
Standard T/R size = 500 pieces on a 7” reel.  
Operation of this device above any of these parameters may cause permanent damage.  
Specifications and information are subject to change without notice  
TriQuint Semiconductor, Inc • Phone 1-800-951-4401 • FAX: 408-577-6633 • e-mail: info-sales@tqs.com • Web site: www.TriQuint.com  
Page 1 of 8 May 2009  
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