Datasheet > AP5527DT1

AP5527DT1

更新时间： 2024-11-26 17:15:35

品牌	Logo	应用领域
富鼎先进 - A-POWER		/
页数	文件大小	规格书
8页	132K
描述
DFN5045-12L

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AP5527DT1 数据手册

AP5527DT1

Halogen-Free Product

Advanced Power

Electronics Corp.

2N AND 2P-CHANNEL ENHANCEMENT

MODE POWER MOSFET

▼ Simple Drive Requirement

N-CH BV_DSS

R_DS(ON)

100V

72mΩ

-100V

▼ Lower Gate Charge

▼ High-Efficiency Bridge Application

▼ RoHS Compliant & Halogen-Free

P-CH BV_DSS

R_DS(ON)

145mΩ

P1S

P2S

P1G

P2G

Description

AP5527 series are from Advanced Power innovated

design and silicon process technology to achieve the

lowest possible on-resistance and fast switching

performance. It provides the designer with an extreme

efficient device for use in a wide range of power

applications.

P2D/N2D

P1D/N1D

N2G

N1G

N2S

N1S

Top

Bottom

Pin 1

N2G

N2S

P2G

P2S

N1G

N1S

P1G

P1S

N2D N1D

P2D P1D

N2D N1D

P2D P1D

DFN5045-12L (DT1)

Absolute Maximum Ratings@T_j=25^oC(unless otherwise specified)

Symbol

Parameter

Rating

Units

N-channel

P-channel

-100

+20

V_DS

V_GS

I_D@T_A=25^oC

I_D@T_A=70^oC

I_DM

Drain-Source Voltage

100

+20

4.1

3.2

Gate-Source Voltage

Drain Current, V_GS@ 10V³

Pulsed Drain Current¹

-3

-2.3

-12

P_D@T_A=25^oC

Total Power Dissipation³

Storage Temperature Range

Operating Junction Temperature Range

2.5

℃

T_STG

-55 to 150

T_J

Thermal Data

Symbol

Parameter

Value

Unit

Rthj-a

Maximum Thermal Resistance, Junction-ambient³

℃/W

202303272

12 3 4 5 6 7 8

中文翻译

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