AP4503GM_10 PDF预览

AP4503GM_10

更新时间: 2025-08-07 12:52:07
品牌 Logo 应用领域
富鼎先进 - A-POWER 驱动
页数 文件大小 规格书
7页 127K
描述
Simple Drive Requirement, Low On-resistance

AP4503GM_10 数据手册

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AP4503GM  
RoHS-compliant Product  
Advanced Power  
Electronics Corp.  
N AND P-CHANNEL ENHANCEMENT  
MODE POWER MOSFET  
Simple Drive Requirement  
N-CH BVDSS  
30V  
28mΩ  
6.9A  
D2  
D2  
Low On-resistance  
RDS(ON)  
D1  
D1  
Fast Switching Performance  
ID  
P-CH BVDSS  
RDS(ON)  
G2  
S2  
-30V  
G1  
S1  
SO-8  
36mΩ  
-6.3A  
Description  
ID  
Advanced Power MOSFETs from APEC provide the  
designer with the best combination of fast switching,  
ruggedized device design, low on-resistance and cost-  
effectiveness.  
D2  
D1  
The SO-8 package is widely preferred for all commercial-industrial  
surface mount applications and suited for low voltage applications  
such as DC/DC converters.  
G2  
G1  
S1  
S2  
Absolute Maximum Ratings  
Symbol  
Parameter  
Rating  
Units  
N-channel  
30  
P-channel  
-30  
VDS  
VGS  
Drain-Source Voltage  
V
V
Gate-Source Voltage  
+20  
+20  
ID@TA=25  
ID@TA=70℃  
IDM  
Continuous Drain Current3  
Continuous Drain Current3  
Pulsed Drain Current1  
6.9  
-6.3  
A
5.5  
-5  
A
30  
-30  
A
PD@TA=25℃  
Total Power Dissipation  
Linear Derating Factor  
2.0  
W
0.016  
W/℃  
TSTG  
TJ  
Storage Temperature Range  
Operating Junction Temperature Range  
-55 to 150  
-55 to 150  
Thermal Data  
Symbol  
Parameter  
Value  
62.5  
Unit  
Rthj-a  
Maximum Thermal Resistance, Junction-ambient3  
/W  
Data and specifications subject to change without notice  
1
201010083  

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