AP4511M

更新时间： 2024-11-09 08:32:03

品牌	Logo	应用领域
富鼎先进 - A-POWER		/
页数	文件大小	规格书
7页	102K
描述
N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET

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AP4511M 数据手册

AP4511M

Advanced Power

Electronics Corp.

N AND P-CHANNEL ENHANCEMENT

MODE POWER MOSFET

▼ Simple Drive Requirement

N-CH BV_DSS

R_DS(ON)

35V

▼ Low On-resistance

25mΩ

▼ Fast Switching Performance

I_D

P-CH BV_DSS

R_DS(ON)

-35V

G1 S2

S1 G1

SO-8

40mΩ

-6.1A

Description

I_D

The Advanced Power MOSFETs from APEC provide the

designer with the best combination of fast switching,

ruggedized device design, low on-resistance and cost-

effectiveness.

The SO-8 package is universally preferred for all commercial-

industrial surface mount applications and suited for low voltage

applications such as DC/DC converters.

Absolute Maximum Ratings

Symbol

Parameter

Rating

Units

N-channel

P-channel

-35

V_DS

V_GS

Drain-Source Voltage

±20

Gate-Source Voltage

±20

I_D@T_A=25℃

I_D@T_A=70℃

I_DM

Continuous Drain Current³

Pulsed Drain Current¹

-6.1

5.7

-5

-30

P_D@T_A=25℃

Total Power Dissipation

Linear Derating Factor

2.0

0.016

W/℃

℃

T_STG

T_J

Storage Temperature Range

Operating Junction Temperature Range

-55 to 150

Thermal Data

Symbol

Parameter

Value

62.5

Unit

Rthj-a

Thermal Resistance Junction-ambient³

Max.

℃/W

Data and specifications subject to change without notice

201122041

12 3 4 5 6 7

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