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AP4513GH PDF预览

AP4513GH

更新时间: 2024-02-19 05:40:59
品牌 Logo 应用领域
富鼎先进 - A-POWER /
页数 文件大小 规格书
7页 98K
描述
N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET

AP4513GH 数据手册

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AP4513GH  
Pb Free Plating Product  
Advanced Power  
Electronics Corp.  
N AND P-CHANNEL ENHANCEMENT  
MODE POWER MOSFET  
Simple Drive Requirement  
N-CH BVDSS  
35V  
42mΩ  
10A  
D1/D2  
Good Thermal Performance  
Fast Switching Performance  
RDS(ON)  
ID  
P-CH BVDSS  
RDS(ON)  
S1  
G1  
-35V  
75mΩ  
-8A  
S2  
G2  
TO-252-4L  
Description  
ID  
The Advanced Power MOSFETs from APEC provide the  
designer with the best combination of fast switching,  
ruggedized device design, low on-resistance and cost-  
effectiveness.  
D1  
D2  
G2  
G1  
S1  
S2  
Absolute Maximum Ratings  
Symbol  
Parameter  
Rating  
Units  
N-channel  
P-channel  
VDS  
VGS  
Drain-Source Voltage  
35  
±20  
10  
6
-35  
±20  
-8  
V
V
Gate-Source Voltage  
ID@TC=25  
ID@TC=100℃  
IDM  
Continuous Drain Current3  
Continuous Drain Current3  
Pulsed Drain Current1  
A
-5  
A
50  
-50  
A
PD@TC=25℃  
Total Power Dissipation  
Linear Derating Factor  
7.8  
W
W/℃  
0.063  
TSTG  
TJ  
Storage Temperature Range  
Operating Junction Temperature Range  
-55 to 150  
-55 to 150  
Thermal Data  
Symbol  
Parameter  
Value  
16  
Units  
/W  
/W  
Rthj-c  
Thermal Resistance Junction-case3  
Thermal Resistance Junction-ambient3  
Max.  
Max.  
Rthj-a  
110  
Data and specifications subject to change without notice  
200929041  

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