Datasheet > AP4511GH-HF

AP4511GH-HF

更新时间： 2024-09-27 21:22:31

品牌	Logo	应用领域
富鼎先进 - A-POWER		/
页数	文件大小	规格书
7页	121K
描述
TRANSISTOR POWER, FET, FET General Purpose Power

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中文翻译

获取价格

技术参数
数据手册

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AP4511GH-HF 技术参数

是否Rohs认证：	符合	生命周期：	Contact Manufacturer
包装说明：	,	Reach Compliance Code：	compliant
风险等级：	5.65	峰值回流温度（摄氏度）：	NOT SPECIFIED
处于峰值回流温度下的最长时间：	NOT SPECIFIED	Base Number Matches：	1

AP4511GH-HF 数据手册

AP4511GH-HF

Halogen-Free Product

Advanced Power

Electronics Corp.

N AND P-CHANNEL ENHANCEMENT

MODE POWER MOSFET

▼ Simple Drive Requirement

D1/D2

N-CH BV_DSS

R_DS(ON)

35V

▼ Good Thermal Performance

30mΩ

▼ Fast Switching Performance

▼ RoHS Compliant

I_D

P-CH BV_DSS

R_DS(ON)

15A

-35V

48mΩ

-12A

TO-252-4L

Description

I_D

Advanced Power MOSFETs from APEC provide the designer with

the best combination of fast switching, ruggedized device design,

low on-resistance and cost-effectiveness.

Absolute Maximum Ratings

Symbol

Parameter

Rating

Units

N-channel

P-channel

-35

V_DS

V_GS

Drain-Source Voltage

+20

Gate-Source Voltage

+20

I_D@T_C=25℃

I_D@T_C=100℃

I_DM

Continuous Drain Current

Pulsed Drain Current¹

-12

-7

-50

P_D@T_C=25℃

Total Power Dissipation

Linear Derating Factor

10.4

W/℃

℃

0.083

T_STG

T_J

Storage Temperature Range

Operating Junction Temperature Range

-55 to 150

Thermal Data

Symbol

Parameter

Value

Units

℃/W

Rthj-c

Maximum Thermal Resistance, Junction-case

Maximum Thermal Resistance, Junction-ambient³

Rthj-a

110

Data and specifications subject to change without notice

201105315

12 3 4 5 6 7

中文翻译

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