5秒后页面跳转
AP4506GEM-HF PDF预览

AP4506GEM-HF

更新时间: 2024-11-18 12:52:07
品牌 Logo 应用领域
富鼎先进 - A-POWER 驱动
页数 文件大小 规格书
7页 123K
描述
Simple Drive Requirement, Low On-resistance

AP4506GEM-HF 技术参数

是否Rohs认证: 符合生命周期:Contact Manufacturer
零件包装代码:SOT包装说明:SMALL OUTLINE, R-PDSO-G8
针数:8Reach Compliance Code:compliant
HTS代码:8541.29.00.75风险等级:5.67
配置:SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE最小漏源击穿电压:30 V
最大漏源导通电阻:0.03 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JESD-30 代码:R-PDSO-G8元件数量:2
端子数量:8工作模式:ENHANCEMENT MODE
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:N-CHANNEL AND P-CHANNEL
最大脉冲漏极电流 (IDM):30 A认证状态:Not Qualified
表面贴装:YES端子形式:GULL WING
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

AP4506GEM-HF 数据手册

 浏览型号AP4506GEM-HF的Datasheet PDF文件第2页浏览型号AP4506GEM-HF的Datasheet PDF文件第3页浏览型号AP4506GEM-HF的Datasheet PDF文件第4页浏览型号AP4506GEM-HF的Datasheet PDF文件第5页浏览型号AP4506GEM-HF的Datasheet PDF文件第6页浏览型号AP4506GEM-HF的Datasheet PDF文件第7页 
AP4506GEM-HF  
Halogen-Free Product  
Advanced Power  
Electronics Corp.  
N AND P-CHANNEL ENHANCEMENT  
MODE POWER MOSFET  
Simple Drive Requirement  
D2  
N-CH BVDSS  
30V  
30mΩ  
6.4A  
D2  
D1  
Low On-resistance  
RDS(ON)  
D1  
Fast Switching Performance  
RoHS Compliant  
ID  
P-CH BVDSS  
RDS(ON)  
G2  
S2  
-30V  
40m  
-6A  
G1  
SO-8  
S1  
Description  
ID  
Advanced Power MOSFETs from APEC provide the  
designer with the best combination of fast switching,  
ruggedized device design,low on-resistance and cost-  
effectiveness.  
D1  
D2  
G1  
G2  
The SO-8 package is widely preferred for commercial-industrial  
surface mount applications and suited for low voltage applications  
such as DC/DC converters.  
S1  
S2  
Absolute Maximum Ratings  
Symbol  
Parameter  
Rating  
Units  
N-channel  
30  
P-channel  
-30  
VDS  
VGS  
Drain-Source Voltage  
V
V
Gate-Source Voltage  
+20  
6.4  
5.1  
30  
+20  
-6.0  
-4.8  
-30  
ID@TA=25℃  
ID@TA=70℃  
IDM  
Continuous Drain Current3  
Continuous Drain Current3  
Pulsed Drain Current1  
A
A
A
PD@TA=25℃  
TSTG  
Total Power Dissipation  
2.0  
W
Storage Temperature Range  
Operating Junction Temperature Range  
-55 to 150  
-55 to 150  
TJ  
Thermal Data  
Symbol  
Parameter  
Value  
62.5  
Unit  
Rthj-a  
Maximum Thermal Resistance, Junction-ambient3  
/W  
Data and specifications subject to change without notice  
1
200902103  

与AP4506GEM-HF相关器件

型号 品牌 获取价格 描述 数据表
AP4509AGH-HF A-POWER

获取价格

Simple Drive Requirement, Good Thermal Performance
AP4509AGM-HF A-POWER

获取价格

Simple Drive Requirement, Low Gate Charge
AP4509GM A-POWER

获取价格

Simple Drive Requirement, Low On-resistance
AP4509GM-HF A-POWER

获取价格

Simple Drive Requirement, Low On-resistance
AP450A ANACHIP

获取价格

2 Channel Linear Controller with Enable Function
AP450AN ANACHIP

获取价格

2 Channel Linear Controller with Enable Function
AP450ANA ANACHIP

获取价格

2 Channel Linear Controller with Enable Function
AP450AS ANACHIP

获取价格

2 Channel Linear Controller with Enable Function
AP450ASA ANACHIP

获取价格

2 Channel Linear Controller with Enable Function
AP450B ANACHIP

获取价格

2 Channel Linear Controller with Enable Function