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AP4511GED-HF

更新时间： 2024-02-09 02:57:07

品牌	Logo	应用领域
富鼎先进 - A-POWER		栅极驱动
页数	文件大小	规格书
7页	126K
描述
Simple Drive Requirement, Lower Gate Charge

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数据手册

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AP4511GED-HF 数据手册

AP4511GED-HF

Halogen-Free Product

Advanced Power

Electronics Corp.

N AND P-CHANNEL ENHANCEMENT

MODE POWER MOSFET

▼ Simple Drive Requirement

N-CH BV_DSS

40V

28mΩ

▼ Lower Gate Charge

R_DS(ON)

▼ Fast Switching Performance

▼ RoHS Compliant & Halogen-Free

I_D

P-CH BV_DSS

R_DS(ON)

-40V

42mΩ

-5A

PDIP-8

Description

I_D

Advanced Power MOSFETs from APEC provide the

designer with the best combination of fast switching,

ruggedized device design, low on-resistance and cost-

effectiveness.

Absolute Maximum Ratings

Symbol

Parameter

Rating

Units

N-channel

P-channel

-40

V_DS

V_GS

Drain-Source Voltage

Gate-Source Voltage

+16

6.0

5.0

+16

-5.0

-4.0

-30

I_D@T_A=25℃

I_D@T_A=70℃

I_DM

Continuous Drain Current³

Pulsed Drain Current¹

Total Power Dissipation

Linear Derating Factor

Storage Temperature Range

P_D@T_A=25℃

2.0

W/℃

℃

0.016

T_STG

T_J

-55 to 150

Operating Junction Temperature Range

Thermal Data

Symbol

Parameter

Maximum Thermal Resistance, Junction-ambient³

Value

62.5

Unit

Rthj-a

℃/W

Data and specifications subject to change without notice

200906014

12 3 4 5 6 7

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