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AON6934A PDF预览

AON6934A

更新时间: 2024-11-18 12:51:39
品牌 Logo 应用领域
美国万代 - AOS /
页数 文件大小 规格书
10页 583K
描述
30V Dual Asymmetric N-Channel AlphaMOS

AON6934A 技术参数

生命周期:Obsolete包装说明:,
Reach Compliance Code:compliant风险等级:5.79
Base Number Matches:1

AON6934A 数据手册

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AON6934A  
30V Dual Asymmetric N-Channel AlphaMOS  
General Description  
Product Summary  
Q1  
Q2  
• Latest Trench Power AlphaMOS (αMOS LV) technology  
• Very Low RDS(on) at 4.5VGS  
VDS  
30V  
30V  
• Low Gate Charge  
• High Current Capability  
• RoHS and Halogen-Free Compliant  
ID (at VGS=10V)  
RDS(ON) (at VGS=10V)  
RDS(ON) (at VGS = 4.5V)  
28A  
36A  
<5.2m  
<9.5mΩ  
<2.9mΩ  
<4.4mΩ  
100% UIS Tested  
100% Rg Tested  
Application  
• DC/DC Converters in Computing, Servers, and POL  
• Isolated DC/DC Converters in Telecom and Industrial  
DFN5X6  
Top View  
Bottom View  
PIN1  
Top View  
Bottom View  
PIN1  
Absolute Maximum Ratings TA=25°C unless otherwise noted  
Parameter  
Symbol  
Max Q1  
Max Q2  
Units  
Drain-Source Voltage  
VDS  
30  
V
Gate-Source Voltage  
VGS  
±20  
28  
±20  
36  
V
A
TC=25°C  
Continuous Drain  
CurrentG  
Pulsed Drain Current C  
ID  
TC=100°C  
22  
28  
IDM  
112  
22  
144  
30  
TA=25°C  
TA=70°C  
Continuous Drain  
Current  
Avalanche Current C  
Avalanche Energy L=0.05mH C  
IDSM  
A
17  
24  
IAS  
32  
46  
A
mJ  
V
EAS  
26  
53  
VDS Spike  
100ns  
VSPIKE  
36  
36  
TC=25°C  
TC=100°C  
TA=25°C  
TA=70°C  
31  
33  
PD  
W
Power Dissipation B  
Power Dissipation A  
12  
13  
3.6  
2.3  
4.3  
2.7  
PDSM  
W
Junction and Storage Temperature Range  
TJ, TSTG  
-55 to 150  
°C  
Thermal Characteristics  
Parameter  
Maximum Junction-to-Ambient A  
Maximum Junction-to-Ambient A D  
Maximum Junction-to-Case  
Symbol  
Typ Q1 Typ Q2 Max Q1 Max Q2  
Units  
°C/W  
°C/W  
°C/W  
t
10s  
29  
56  
24  
50  
3
35  
67  
4
29  
60  
RθJA  
Steady-State  
Steady-State  
RθJC  
3.3  
3.8  
Rev 0 : Oct. 2012  
www.aosmd.com  
Page 1 of 10  

AON6934A 替代型号

型号 品牌 替代类型 描述 数据表
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