Datasheet > AON6974A

AON6974A

更新时间： 2024-09-16 12:51:39

品牌	Logo	应用领域
美国万代 - AOS		/
页数	文件大小	规格书
10页	487K
描述
30V Dual Asymmetric N-Channel AlphaMOS

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AON6974A 数据手册

AON6974A

30V Dual Asymmetric N-Channel AlphaMOS

General Description

Product Summary

• Latest Trench Power AlphaMOS (αMOS LV) technology

• Integrated Schottky Diode (SRFET) on Low-Side

• Very Low RDS(on) at 4.5V_GS

• Low Gate Charge

• High Current Capability

V_DS

30V

I_D(at V_GS=10V)

R_DS(ON)(at V_GS=10V)

R_DS(ON)(at V_GS=4.5V)

28A

32A

<5.2mΩ

<9.5mΩ

<3.3mΩ

<5.0mΩ

• RoHS and Halogen-Free Compliant

100% UIS Tested

100% Rg Tested

Application

• DC/DC Converters in Computing, Servers, and POL

• Isolated DC/DC Converters in Telecom and Industrial

Top View

Bottom View

DFN5X6B

Top View

Bottom View

Q2: SRFET^TM

Soft Recovery MOSFET:

Integrated Schottky Diode

PIN1

Absolute Maximum Ratings T_A=25°C unless otherwise noted

Parameter

Symbol

V_DS

Max Q1

Max Q2

Units

Drain-Source Voltage

Gate-Source Voltage

V_GS

±20

T_C=25°C

Continuous Drain

Current ^G

Pulsed Drain Current ^C

I_D

T_C=100°C

I_DM

112

144

T_A=25°C

T_A=70°C

Continuous Drain

Current

Avalanche Current ^C

Avalanche Energy L=0.05mH ^C

I_DSM

I_AS

E_AS

V_DSSpike

100ns

V_SPIKE

T_C=25°C

T_C=100°C

T_A=25°C

T_A=70°C

P_D

Power Dissipation ^B

Power Dissipation ^A

3.6

2.3

4.3

2.7

P_DSM

Junction and Storage Temperature Range

T_J, T_STG

-55 to 150

°C

Thermal Characteristics

Parameter

Maximum Junction-to-Ambient ^A

Maximum Junction-to-Ambient ^{A D}

Maximum Junction-to-Case

Symbol

Typ Q1 Typ Q2 Max Q1 Max Q2

Units

°C/W

≤ 10s

R_θJA

Steady-State

R_θJC

3.3

3.8

Rev 0 : Nov. 2012

www.aosmd.com

Page 1 of 10

12 3 4 5 6 7...10

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AON6974A 替代型号

型号	品牌	替代类型	描述	数据表
AON6934A	AOS	类似代替	30V Dual Asymmetric N-Channel AlphaMOS

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