Datasheet > AON7200

AON7200

更新时间： 2024-11-18 12:24:59

品牌	Logo	应用领域
美国万代 - AOS		/
页数	文件大小	规格书
6页	227K
描述
30V N-Channel MOSFET

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AON7200 数据手册

AON7200

30V N-Channel MOSFET

General Description

Product Summary

V_DS

30V

The AON7200 uses trench MOSFET technology that is

uniquely optimized to provide the most efficient high

frequency switching performance. Conduction and

switching losses are minimized due to an extremely low

combination of R_DS(ON)and Crss.

I_D(at V_GS=10V)

R_DS(ON)(at V_GS=10V)

R_DS(ON)(at V_GS= 4.5V)

40A

< 8mΩ

< 11mΩ

100% UIS Tested

100% R_gTested

DFN 3x3 EP

Top View

Bottom View

Top View

Pin 1

Absolute Maximum Ratings T_A=25°C unless otherwise noted

Parameter

Symbol

Maximum

Units

Drain-Source Voltage

V_DS

Gate-Source Voltage

V_GS

±20

T_C=25°C

Continuous Drain

Current ^G

I_D

T_C=100°C

Pulsed Drain Current ^C

I_DM

146

15.8

12.7

T_A=25°C

T_A=70°C

Continuous Drain

Current

Avalanche Current ^C

Repetitive avalanche energy L=0.1mH ^C

I_DSM

I_AS, I_AR

E_AS, E_AR

T_C=25°C

Power Dissipation ^B

T_C=100°C

P_D

T_A=25°C

3.1

P_DSM

°C

Power Dissipation ^A

T_A=70°C

Junction and Storage Temperature Range

T_J, T_STG

-55 to 150

Thermal Characteristics

Parameter

Symbol

Typ

Max

Units

°C/W

Maximum Junction-to-Ambient ^A

Maximum Junction-to-Ambient ^{A D}

Maximum Junction-to-Case

≤ 10s

R_θJA

Steady-State

R_θJC

1.6

Rev 5: Jul 2011

www.aosmd.com

Page 1 of 6

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