是否Rohs认证: | 符合 | 生命周期: | Active |
包装说明: | SMALL OUTLINE, R-PDSO-F6 | Reach Compliance Code: | compliant |
风险等级: | 5.74 | 雪崩能效等级(Eas): | 9 mJ |
外壳连接: | DRAIN SOURCE | 配置: | SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE |
最小漏源击穿电压: | 30 V | 最大漏极电流 (Abs) (ID): | 16 A |
最大漏极电流 (ID): | 16 A | 最大漏源导通电阻: | 0.0116 Ω |
FET 技术: | METAL-OXIDE SEMICONDUCTOR | JESD-30 代码: | R-PDSO-F6 |
元件数量: | 2 | 端子数量: | 6 |
工作模式: | ENHANCEMENT MODE | 最高工作温度: | 150 °C |
最低工作温度: | -55 °C | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | SMALL OUTLINE |
极性/信道类型: | N-CHANNEL | 最大功率耗散 (Abs): | 7.3 W |
最大脉冲漏极电流 (IDM): | 64 A | 表面贴装: | YES |
端子形式: | FLAT | 端子位置: | DUAL |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
AON6946L | AOS |
获取价格 |
DFN5X6 PACKAGE MARKING DESCRIPTION | |
AON6970 | AOS |
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30V Dual Asymmetric N-Channel AlphaMOS | |
AON6971 | AOS |
获取价格 |
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET | |
AON6973A | AOS |
获取价格 |
30V Dual Asymmetric N-Channel AlphaMOS | |
AON6974A | AOS |
获取价格 |
30V Dual Asymmetric N-Channel AlphaMOS | |
AON6978 | AOS |
获取价格 |
Plastic Encapsulated Device | |
AON6992 | AOS |
获取价格 |
Power Field-Effect Transistor, | |
AON7200 | FREESCALE |
获取价格 |
30V N-Channel MOSFET | |
AON7200 | AOS |
获取价格 |
30V N-Channel MOSFET | |
AON7210 | FREESCALE |
获取价格 |
30V N-Channel MOSFET |