Datasheet > AON7210

AON7210

更新时间： 2024-11-21 12:51:39

品牌	Logo	应用领域
美国万代 - AOS		/
页数	文件大小	规格书
6页	245K
描述
30V N-Channel MOSFET

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AON7210 数据手册

AON7210

30V N-Channel MOSFET

General Description

Product Summary

V_DS

The AON7210 uses trench MOSFET technology that is

uniquely optimized to provide the most efficient high

frequency switching performance.Power losses are

minimized due to an extremely low combination of R_DS(ON)

and Crss.In addition,switching behavior is well controlled

with a "Schottky style" soft recovery body diode.

30V

50A

I_D(at V_GS=10V)

< 4mΩ

R_DS(ON)(at V_GS=10V)

< 5.8mΩ

R_DS(ON)(at V_GS= 4.5V)

100% UIS Tested

100% R_gTested

DFN 3.3x3.3

Top View

Bottom View

Top View

Pin 1

Absolute Maximum Ratings T_A=25°C unless otherwise noted

Parameter

Symbol

Maximum

Units

V_DS

Drain-Source Voltage

V_GS

I_D

I_DM

I_DSM

Gate-Source Voltage

Continuous Drain

Current ^G

±20

T_C=25°C

T_C=100°C

Pulsed Drain Current ^C

250

T_A=25°C

T_A=70°C

Continuous Drain

Current

Avalanche Current ^C

Avalanche energy L=0.1mH ^C

I_AS, I_AR

E_AS, E_AR

101

T_C=25°C

P_D

Power Dissipation ^B

Power Dissipation ^A

T_C=100°C

T_A=25°C

T_A=70°C

6.2

P_DSM

T_J, T_STG

Junction and Storage Temperature Range

-55 to 150

°C

Thermal Characteristics

Parameter

Symbol

Typ

Max

Units

°C/W

Maximum Junction-to-Ambient ^A

t ≤ 10s

R_θJA

Maximum Junction-to-Ambient ^{A D}

Maximum Junction-to-Case

Steady-State

R_θJC

1.1

1.5

Rev 0: November 2010

www.aosmd.com

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