AO4840
Dual N-Channel Enhancement Mode Field Effect Transistor
FEATURES
VDS=40V,ID=6A,RDS(ON)≤30mΩ@VGS=10V
Low on-resistance and low gate charge
For load switch and in PWM applications
Surface Mount device
SOP-8
MECHANICAL DATA
Case: SOP-8
Case Material: Molded Plastic. UL flammability
Classification Rating: 94V-0
Weight: 0.3 grams (approximate)
MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
Parameter
Drain-source voltage
Gate-source voltage
Symbol
Value
40
±20
6
5
30
14
10
2
1.3
90
40
150
Unit
V
V
VDS
VGS
TA = 25°C
TA = 70°C
A
Continuous drain current
ID
A
Pulsed drain current
Avalanche current
Avalanche energy L=0.1mH
IDM
IAS,IAR
EAS,EAR
A
A
mJ
W
TA = 25°C
TA = 70°C
Power dissipation
PD
W
Thermal resistance from Junction to ambient
Thermal resistance from Junction to Lead
Junction temperature
Rθ
JA
°C/W
°C/W
°C
°C
Rθ
JL
TJ
TSTG
Storage temperature
-55 ~+150
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified)
Parameter
Symbol
V(BR)DSS*
Min
40
Typ
Max
Unit
V
Conditions
Drain-Source breakdown voltage
Zero gate voltage drain current
Gate-body leakage current
Gate-threshold voltage
V =0V, I =250μA
GS
D
IDSS
IGSS
*
*
1
±100
3
μA VDS=40V,
VGS=0V
nA
V
VDS=0V,
DS
VGS=±20V
1.7
30
2.5
GS
D
VGS(th)
*
V =V , I =250μA
On-State Drain Current
ID(ON)
A
VDS=5V,
VGS=10V
24
36
30
27
0.7
30
45
38
GS
GS
D
V
V
=10V, I =6A,
mΩ
mΩ
mΩ
S
V
A
pF
pF
pF
Ω
Drain-source on-resistance
RDS(ON)*
=10V, I =6A, T =125°C
D
J
VGS=4.5V, ID=5A
gFS
VSD
IS
Ciss
Coss
Crss
Rg
Forward transconductance
Diode forward voltage
Diode forward current
Input capacitance
Output capacitance
Reverse transfer capacitance
Gate resistance
V =5V, I =6A
DS
D
1
2
IS=1A, VGS=0V
410
55
25
516
82
43
650
110
60
6.9
5.6
10.8
VDS=20V, VGS=0V, f=1MHz
VDS=0V, VGS=0V, f=1MHz
2.3
4.6
4.3
8.9
2.4
1.4
6.4
3.6
16.2
6.6
18
nC V =4.5V,V =20V,I =6A
nC
VGS=10V,VDS=20V,ID=6A
nC
nC
nS
nS
nS
nS
nS
GS
DS
D
Total gate charge
Qg
Gate-source charge
Gate-drain charge
Turn-on delay time
Turn-on rise time
Turn-off delay time
Turn-off fall time
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Qgs
Qgd
td(on)
tr
td(off)
tf
VGS=10V, VDS=20V,
RGEN=3Ω,RL=3.3Ω
trr
Qrr
24
F
I =6A, dI/dt=100A/μ s
10
F
nC I =6A, dI/dt=100A/μ s
*Pulse test ; Pulse width ≤300µs, Duty cycle ≤0.5% .
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