Datasheet > AO4842_12

AO4842_12

更新时间： 2024-11-18 12:51:31

品牌	Logo	应用领域
美国万代 - AOS		/
页数	文件大小	规格书
4页	382K
描述
30V Dual N-Channel MOSFET

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AO4842_12 数据手册

AO4842

30V Dual N-Channel MOSFET

General Description

Product Summary

The AO4842 uses advanced trench technology to

provide excellent R_DS(ON)and low gate charge. The

two MOSFETs make a compact and efficient switch

and synchronous rectifier combination for use in

buck converters.

V_DS(V) = 30V

I_D= 7.7A

R_DS(ON)< 21mΩ (V_GS= 10V)

R_DS(ON)< 30mΩ (V_GS= 4.5V)

(V_GS= 10V)

100% UIS Tested

100% Rg Tested

SOIC-8

Top View

Bottom View

Top View

Pin1

Absolute Maximum Ratings T_A=25°C unless otherwise noted

Parameter

Symbol

Maximum

Units

Drain-Source Voltage

V_DS

Gate-Source Voltage

V_GS

±20

7.7

T_A=25°C

T_A=70°C

Continuous Drain

Current ^AF

I_D

6.5

Pulsed Drain Current ^B

I_DM

T_A=25°C

T_A=70°C

P_D

°C

Power Dissipation

1.44

-55 to 150

Junction and Storage Temperature Range

T_J, T_STG

Thermal Characteristics

Parameter

Symbol

Typ

Max

62.5

110

Units

°C/W

Maximum Junction-to-Ambient ^A

t ≤ 10s

R_θJA

Steady-State

Maximum Junction-to-Lead ^C

R_θJL

Alpha & Omega Semiconductor, Ltd.

www.aosmd.com

12 3 4

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