Datasheet > AO4852

AO4852

更新时间： 2024-11-18 12:51:27

品牌	Logo	应用领域
美国万代 - AOS		/
页数	文件大小	规格书
4页	171K
描述
60V Dual N-Channel MOSFET

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AO4852 数据手册

AO4852

60V Dual N-Channel MOSFET

General Description

Product Summary

The AO4852 uses advanced trench technology to

provide excellent R_DS(ON)and low gate charge. As a pair

these MOSFETs operate very efficiently in Push Pull

and Bridge topologies.

V_DS(V) = 60V

I_D= 3.5A

R_DS(ON)<90mΩ (V_GS= 10V)

_DS(ON)<105mΩ (V_GS= 4.5V)

(V_GS= 10V)

100% UIS Tested

100% Rg Tested

SOIC-8

Top View

Bottom View

Top View

Pin1

Absolute Maximum Ratings T_A=25°C unless otherwise noted

Maximum

10 Sec

Parameter

Symbol

V_DS

Steady State

Units

Drain-Source Voltage

Gate-Source Voltage

V_GS

±20

T_A=25°C

T_A=70°C

3.5

2.8

Continuous Drain

Current ^A

I_D

2.4

Pulsed Drain Current ^B

I_DM

T_A=25°C

T_A=70°C

1.4

0.9

P_D

Power Dissipation

Avalanche Current ^B

1.3

I_AR

°C

Repetitive avalanche energy 0.3mH ^B

E_AR

9.6

Junction and Storage Temperature Range

T_J, T_STG

-55 to 150

Thermal Characteristics

Parameter

Symbol

Typ

Max

Units

°C/W

Maximum Junction-to-Ambient ^A

t ≤ 10s

62.5

R_θJA

R_θJL

Maximum Junction-to-Ambient ^A

Maximum Junction-to-Lead ^C

Steady-State

12 3 4

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