Datasheet > AO4842

AO4842

更新时间： 2024-10-15 18:09:59

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描述
SOP-8

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数据手册

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AO4842 数据手册

AO4842

Dual N-Channel Enhancement Mode Field Effect Transistor

FEATURES

 V_DS=30V,I_D=7.7A,R_DS(ON)≤21mΩ@V_GS=10V

 Low on-resistance and low gate charge

 For synchronous rectifier applications

 Surface Mount device

SOP-8

MECHANICAL DATA



Case: SOP-8

Case Material: Molded Plastic. UL flammability

Classification Rating: 94V-0

Weight: 0.3 grams (approximate)

MAXIMUM RATINGS (T_A= 25°C unless otherwise noted)

Parameter

Drain-source voltage

Gate-source voltage

Symbol

Value

±20

7.7

6.5

1.44

110

Unit

VDS

V_GS

T_A= 25°C

T_A= 70°C

Continuous drain current

I_D

Pulsed drain current

I_DM

P_D

T_A= 25°C

T_A= 70°C

Power dissipation

Thermal resistance from Junction to ambient

Thermal resistance from Junction to Lead

Junction temperature

R_θ

°C/W

°C

R_θ

T_J

T_STG

150

-55 ~+150

Storage temperature

ELECTRICAL CHARACTERISTICS (T_A= 25°C unless otherwise specified)

Parameter

Symbol

V(BR)DSS*

Min

Typ

0.004

2.1

Max

Unit

μA V_DS=30V,

Conditions

VGS=0V, ID=250μA

VGS=0V

V_DS=0V,

V^GS=±20V

Drain-Source breakdown voltage

Zero gate voltage drain current

Gate-body leakage current

Gate-threshold voltage

±100

2.6

I_DSS

I_GSS

V_GS(th)

1.5

VDS=VGS, ID=250μA

On-State Drain Current

I_D(ON)

V_DS=5V,

VGS=4.5V

16.8

23.4

=10V, I =7.7A,

mΩ

Drain-source on-resistance

R_DS(ON)*

VGS=10V, ID=7.7A, TJ=125°C

=4.5V, I =5A

g_FS

V_SD

I_S

C_iss

C_oss

C_rss

R_g

Forward transconductance

Diode forward voltage

Diode forward current

Input capacitance

Output capacitance

Reverse transfer capacitance

Gate resistance

V =5V, I =7.7A

0.75

2.4

448

IS=1A, VGS=0V

373

V_{DS=15V, VGS=0V, f=1MHz}

1.8

3.5

7.2

1.3

1.7

4.5

2.7

14.9

2.9

10.5

4.5

2.8

V_{DS=0V, V =0V, f=1MHz}

VGS=4.5V,VDS=15V,ID=7.7A

Total gate charge

Q_g

VGS=10V,VDS=15V,ID=7.7A

Gate-source charge

Gate-drain charge

Turn-on delay time

Turn-on rise time

Turn-off delay time

Turn-off fall time

Body Diode Reverse Recovery Time

Body Diode Reverse Recovery Charge

Q_gs

Q_gd

t_d(on)

t_r

t_d(off)

t_f

VGS=10V, VDS=15V,

RGEN=3Ω,RL=1.95Ω

t_rr

Q_rr

12.6

I =7.7A, dI/dt=100A/μ s

nC IF=7.7A, dI/dt=100A/μ s

*Pulse test ; Pulse width ≤300µs, Duty cycle ≤0.5% .

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