Datasheet > AO4850

AO4850

更新时间： 2024-06-27 12:11:46

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合科泰 - HOTTECH		/
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描述
SOP-8

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数据手册

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AO4850 数据手册

AO4850

Dual N-Channel Enhancement Mode Field Effect Transistor

FEATURES

 V_DS=75V,I_D=3.1A,R_DS(ON)≤130mΩ@V_GS=10V

 Low on-resistance and low gate charge

 For synchronous rectifier applications

 Surface Mount device

SOP-8

MECHANICAL DATA



Case: SOP-8

Case Material: Molded Plastic. UL flammability

Classification Rating: 94V-0

Weight: 0.3 grams (approximate)

MAXIMUM RATINGS (T_A= 25°C unless otherwise noted)

Parameter

Drain-source voltage

Gate-source voltage

Symbol

10Sec

Steady state

Unit

VDS

±25

V_GS

T_A= 25°C

T_A= 70°C

3.1

2.4

2.3

1.8

Continuous drain current

I_D

Pulsed drain current

I_DM

P_D

T_A= 25°C

T_A= 70°C

1.3

1.1

0.7

Power dissipation

Avalanche Current

I_AR

E_AR

110

Repetitive avalanche energy 0.3mH

Thermal resistance from Junction to ambient

Thermal resistance from Junction to Lead

Junction temperature

°C/W

°C

R_θ

T_J

T_STG

150

Storage temperature

-55 ~+150

ELECTRICAL CHARACTERISTICS (T_A= 25°C unless otherwise specified)

Parameter

Symbol

V^(BR)DSS*

Min

Typ

Max

Unit

μA V_DS=75V,

Conditions

VGS=0V, ID=10mA

Drain-Source breakdown voltage

Zero gate voltage drain current

Gate-body leakage current

Gate-threshold voltage

I_DSS

I_GSS

±100

VGS=0V

VGS=±25V

V_DS=0V,

1.0

2.3

V_GS(th)

VDS=VGS, ID=250μA

V_DS=5V,

VGS=10V

VGS=10V, ID=3.1A,

On-State Drain Current

I_D(ON)

105

158

126

130

195

165

mΩ

Drain-source on-resistance

R_DS(ON)*

VGS=10V, ID=3.1A, T =125°

VGS=4.5V, ID=2A

g_FS

V_SD

I_S

C_iss

C_oss

C_rss

R_g

Forward transconductance

Diode forward voltage

Diode forward current

Input capacitance

Output capacitance

Reverse transfer capacitance

Gate resistance

VDS=5V, I =3.1A

0.77

2.5

380

IS=1A, VGS=0V

290

V_{DS=30V, VGS=0V, f=1MHz}

V_{DS=0V, VGS=0V, f=1MHz}

2.4

3.5

2.34

5.14

0.97

1.18

nC V =4.5V,V =30V,I =3.1A

VGS=10V,VDS=30V,ID=3.1A

Total gate charge

Q_g

Gate-source charge

Gate-drain charge

Turn-on delay time

Turn-on rise time

Q_gs

Q_gd

t_d(on)

t_r

VGS=10V, VDS=30V,

3.4

t_d(off)

t_f

t_rr

14.4

2.4

30.2

21.5

RGEN=3Ω,RL=9.7Ω

Turn-off delay time

Turn-off fall time

Body Diode Reverse Recovery Time

Body Diode Reverse Recovery Charge

I =3.1A, dI/dt=100A/μ s

Q_rr

nC I =3.1A, dI/dt=100A/μ s

*Pulse test ; Pulse width ≤300µs, Duty cycle ≤0.5% .

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