Datasheet > AO4240

AO4240

更新时间： 2024-11-18 12:49:31

品牌	Logo	应用领域
飞思卡尔 - FREESCALE		/
页数	文件大小	规格书
6页	289K
描述
40V N-Channel MOSFET

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AO4240 数据手册

AO4240

40V N-Channel MOSFET

General Description

The AO4240 uses trench MOSFET technology that is

uniquely optimized to provide the most efficient high

minimized due to an extremely low combination of

frequency switching performance.Power losses are

R_DS(ON)

and Crss. In addition,switching behavior is well

controlled with a "Schottky style" soft recovery body

diode.

Features

V_DS

40V

I_D(at V_GS=10V)

24A

_DS(ON)(at V_GS=10V)

< 3.3mΩ

< 4.3mΩ

R_DS(ON)(at V_GS=4.5V)

SOIC-8

Absolute Maximum Ratings T_A=25°C unless otherwise noted

Parameter

Symbol

Maximum

Units

Drain-Source Voltage

V_DS

Gate-Source Voltage

V_GS

±20

T_A=25°C

T_A=70°C

Continuous Drain

Current

I_D

Pulsed Drain Current ^C

Avalanche Current ^C

I_DM

I_AS

170

Avalanche energy L=0.1mH ^C

T_A=25°C

E_AS

281

3.1

P_D

°C

Power Dissipation ^B

T_A=70°C

Junction and Storage Temperature Range

T_J, T_STG

-55 to 150

Thermal Characteristics

Parameter

Symbol

Typ

Max

Units

°C/W

Maximum Junction-to-Ambient ^A

Maximum Junction-to-Ambient ^{A D}

Maximum Junction-to-Lead

≤ 10s

R_θJA

Steady-State

R_θJL

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