Datasheet > AO4260

AO4260

更新时间： 2024-10-01 18:09:39

品牌	Logo	应用领域
合科泰 - HOTTECH		/
页数	文件大小	规格书
7页	624K
描述
SOP-8

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中文翻译

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数据手册

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AO4260 数据手册

AO4260

LOW VOLTAGE MOSFET (N-CHANNEL)

FEATURES

 Ultra low on-resistance:V_DS=60V,I_D=18A,R_DS(ON)≤5.2mΩ@V_GS=10V

 For boost converters and synchronous rectifiers applications

 For high frequency switching applications

 Surface Mount device

SOP-8

MECHANICAL DATA



Case: SOP-8

Case Material: Molded Plastic. UL flammability

Classification Rating: 94V-0

Weight: 0.3 grams (approximate)

MAXIMUM RATINGS (T_A= 25°C unless otherwise noted)

Parameter

Drain-source voltage

Gate-source voltage

Symbol

Value

Unit

VDS

±20

V_GS

T_A= 25°C

T_A= 70°C

Continuous drain current

I_D

Pulsed drain current

Avalanche current

I_DM

I_AS

130

Avalanche energy L=0.1mH

E_AS

211

3.1

T_A= 25°C

T_A= 70°C

Power dissipation

P_D

Thermal resistance from Junction to ambient

Thermal resistance from Junction to Lead

Junction temperature

R_θ

T_J

T_STG

°C/W

°C

150

-55 ~+150

Storage temperature

ELECTRICAL CHARACTERISTICS (T_A= 25°C unless otherwise specified)

Parameter

Symbol

V^(BR)DSS*

Min

Typ

Max

Unit

Conditions

Drain-Source breakdown voltage

Zero gate voltage drain current

Gate-body leakage current

Gate-threshold voltage

V =0V, I =250μA

I_DSS

I_GSS

±10

2.4

μA V_DS=60V,

V^GS=0V

V_DS=0V,

VGS=±20V

1.3

1.8

V_GS(th)

V =V , I =250μA

On-State Drain Current

I_D(ON)

130

V_DS=5V,

V^GS=10V

4.3

6.9

0.68

5.2

8.4

6.3

V =10V, I =18A

mΩ

Drain-source on-resistance

R_DS(ON)*

V =10V, I =18A, T =125°C

VGS=4.5V, ID=16A

Forward transconductance

Diode forward voltage

Diode forward current

Input capacitance

Output capacitance

Reverse transfer capacitance

Gate resistance

Total gate charge

Gate-source charge

Gate-drain charge

Turn-on delay time

Turn-on rise time

Turn-off delay time

Turn-off fall time

Body Diode Reverse Recovery Time

Body Diode Reverse Recovery Charge

g_FS

V_SD

I_S

C_iss

C_oss

C_rss

R_g

V =5V, I =18A

4.5

IS=0.83A, VGS=0V

4940

445

0.9

V_{DS=30V, VGS=0V, f=1MHz}

V_{DS=0V, VGS=0V, f=1MHz}

0.4

1.4

100

V =4.5V,V =30V,I =18A

Q_g

VGS=10V,VDS=30V,ID=18A

12.5

8.5

15.5

Q_gs

Q_gd

t_d(on)

t_r

t_d(off)

t_f

VGS=10V, VDS=30V,

RGEN=3Ω,RL=1.67Ω

t_rr

Q_rr

I =18A, dI/dt=500A/μ s

*Pulse test ; Pulse width ≤300µs, Duty cycle ≤ 0.5%.

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