Datasheet > AO4304

AO4304

更新时间： 2024-06-27 12:11:22

品牌	Logo	应用领域
合科泰 - HOTTECH		/
页数	文件大小	规格书
7页	816K
描述
SOP-8

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数据手册

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AO4304 数据手册

4304

LOW VOLTAGE MOSFET (N-CHANNEL)

FEATURES

 Ultra low on-resistance:V_DS=30V,I_D=18A,R_DS(ON)≤6mΩ@V_GS=10V

 For battery protection applications

 For load switch applications

 Surface Mount device

SOP-8

MECHANICAL DATA



Case: SOP-8

Case Material: Molded Plastic. UL flammability

Classification Rating: 94V-0

Weight: 0.3 grams (approximate)

MAXIMUM RATINGS (T_A= 25°C unless otherwise noted)

Parameter

Drain-source voltage

Gate-source voltage

Symbol

Value

Unit

VDS

±20

V_GS

T_A= 25°C

T_A= 70°C

Continuous drain current

I_D

Pulsed drain current

Avalanche current

Avalanche energy L=0.1mH

I_DM

I_AS,I_AR

E_AS,E_AR

200

T_A= 25°C

T_A= 70°C

3.6

Power dissipation

P_D

2.3

Thermal resistance from Junction to ambient

Thermal resistance from Junction to Lead

Junction temperature

R_θ

T_J

T_STG

°C/W

°C

150

-55 ~+150

Storage temperature

ELECTRICAL CHARACTERISTICS (T_A= 25°C unless otherwise specified)

Parameter

Symbol

Min

Typ

Max

Unit

Conditions

V^(BR)DSS*

Drain-Source breakdown voltage

Zero gate voltage drain current

Gate-body leakage current

Gate-threshold voltage

V^GS=0V, I^D=250μA

I_DSS

I_GSS

μA V_DS=30V,

V^GS=0V

nA V_DS=0V,

±100

2.4

VGS=±20V

V_GS(th)

1.4

200

1.9

mΩ

V^DS=V^GS, I^D=250μA

V_DS=5V,

On-State Drain Current

I_D(ON)

V^GS=10V

V^GS=10V, I^D=15A

^GS=10V, I^D=15A, T^J=125°C

4.1

6.5

0.7

9.5

7.6

Drain-source on-resistance

R_DS(ON)*

VGS=4.5V, ID=10A

V^DS=5V, I^D=15A

IS=1A, VGS=0V

g_FS

V_SD

I_S

C_iss

C_oss

C_rss

R_g

Forward transconductance

Diode forward voltage

Diode forward current

Input capacitance

Output capacitance

Reverse transfer capacitance

Gate resistance

Total gate charge

Gate-source charge

Gate-drain charge

Turn-on delay time

Turn-on rise time

Turn-off delay time

Turn-off fall time

Body Diode Reverse Recovery Time

Body Diode Reverse Recovery Charge

1275 1598 1920

V_{DS=15V, VGS=0V, f=1MHz}

215

0.7

8.5

308

154

1.5

11.1

5.2

5.6

7.3

400

215

2.3

6.5

V_{DS=0V, VGS=0V, f=1MHz}

V^GS=4.5V,V^DS=15V,I^D=15A

Q_g

VGS=10V,VDS=15V,ID=15A

Q_gs

Q_gd

t_d(on)

t_r

t_d(off)

t_f

VGS=10V, VDS=15V,

RGEN=3Ω,RL=1Ω

5.3

9.5

17.5

t_rr

Q_rr

I =15A, dI/dt=500A/μ s

I^F=15A, dI/dt=500A/μ s

*Pulse test ; Pulse width ≤300µs, Duty cycle ≤0.5% .

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