Datasheet > AO4286

AO4286

更新时间： 2024-11-18 12:51:27

品牌	Logo	应用领域
美国万代 - AOS		/
页数	文件大小	规格书
5页	334K
描述
100V N-Channel MOSFET

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AO4286 数据手册

AO4286

100V N-Channel MOSFET

General Description

Product Summary

V_DS

100V

The AO4286 uses trench MOSFET technology that is

uniquely optimized to provide the most efficient high

frequency switching performance. Both conduction and

switching power losses are minimized due to an

extremely low combination of R_DS(ON), Ciss and Coss.

This device is ideal for boost converters and synchronous

rectifiers for consumer, telecom, industrial power supplies

and LED backlighting.

I_D(at V_GS=10V)

R_DS(ON)(at V_GS=10V)

R_DS(ON)(at V_GS=4.5V)

< 68mΩ

< 92mΩ

100% UIS Tested

SOIC-8

Top View

Bottom View

Absolute Maximum Ratings T_A=25°C unless otherwise noted

Parameter

Symbol

V_DS

Maximum

Units

Drain-Source Voltage

Gate-Source Voltage

100

±20

V_GS

T_C=25°C

T_C=70°C

Continuous Drain

Current

I_D

Pulsed Drain Current ^C

Avalanche Current ^C

I_DM

I_AS

Avalanche energy L=0.1mH ^C

T_A=25°C

E_AS

0.8

2.5

P_D

°C

Power Dissipation ^B

1.6

T_A=70°C

Junction and Storage Temperature Range

T_J, T_STG

-55 to 150

Thermal Characteristics

Parameter

Symbol

Typ

Max

Units

°C/W

Maximum Junction-to-Ambient ^A

Maximum Junction-to-Ambient ^{A D}

Maximum Junction-to-Lead

≤ 10s

R_θJA

Steady-State

R_θJL

Rev 0: Nov. 2012

www.aosmd.com

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