Datasheet > AO4302

AO4302

更新时间： 2024-01-27 10:37:31

品牌	Logo	应用领域
阿尔法 - ALPHA		/
页数	文件大小	规格书
6页	214K
描述
30V N-Channel MOSFET

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AO4302 数据手册

March 2002

AO4402

N-Channel Enhancement Mode Field Effect Transistor

General Description

Features

The AO4402 uses advanced trench technology to

provide excellent R_DS(ON), low gate charge and

operation with gate voltages as low as 2.5V. This

device is suitable for use as a load switch or in PWM

applications.

V_DS(V) = 30V

I_D= 12A

R_DS(ON)< 14mΩ (V_GS= 10V)

R_DS(ON)< 16mΩ (V_GS= 4.5V)

R_DS(ON)< 22mΩ (V_GS= 2.5V)

SOIC-8

Absolute Maximum Ratings T_A=25°C unless otherwise noted

Parameter

Symbol

Maximum

Units

V_DS

Drain-Source Voltage

V_GS

Gate-Source Voltage

Continuous Drain

Current ^A

±12

T_A=25°C

T_A=70°C

I_D

I_DM

Pulsed Drain Current ^B

T_A=25°C

T_A=70°C

P_D

Power Dissipation

2.1

T_J, T_STG

Junction and Storage Temperature Range

-55 to 150

°C

Thermal Characteristics

Parameter

Symbol

Typ

Max

Units

°C/W

Maximum Junction-to-Ambient ^A

Maximum Junction-to-Lead ^C

t ≤ 10s

Steady-State

R_θJA

R_θJL

Alpha & Omega Semiconductor, Ltd.

12 3 4 5 6

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