Datasheet > AO4260

AO4260

更新时间： 2024-02-28 16:20:53

品牌	Logo	应用领域
飞思卡尔 - FREESCALE		/
页数	文件大小	规格书
6页	279K
描述
60V N-Channel MOSFET

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AO4260 数据手册

AO4260

60V N-Channel MOSFET

General Description

The AO4260 uses trench MOSFET technology that is

uniquely optimized to provide the most efficient high

switching power losses are minimized due to an

frequency switching performance. Both conduction and

extremely low combination of R

_DS(ON), Ciss and Coss.This device is ideal for boost converters and synchronous

rectifiers for consumer, telecom, industrial powersupplies

and LED backlighting.

Features

V_DS

60V

I_D(at V_GS=10V)

R_DS(ON)(at V_GS=10V)

R_DS(ON)(at V_GS=4.5V)

18A

< 5.2mΩ

< 6.3mΩ

Absolute Maximum Ratings T_A=25°C unless otherwise noted

Parameter

Symbol

V_DS

Maximum

Units

Drain-Source Voltage

Gate-Source Voltage

±20

V_GS

T_A=25°C

T_A=70°C

Continuous Drain

Current

I_D

Pulsed Drain Current ^C

I_DM

I_AS

130

Avalanche Current ^C

211

Avalanche energy L=0.1mH ^C

T_A=25°C

Power Dissipation ^B

E_AS

3.1

P_D

°C

T_A=70°C

Junction and Storage Temperature Range

T_J, T_STG

-55 to 150

Thermal Characteristics

Parameter

Symbol

Typ

Max

Units

°C/W

Maximum Junction-to-Ambient ^A

Maximum Junction-to-Ambient ^{A D}

Maximum Junction-to-Lead

≤ 10s

R_θJA

Steady-State

R_θJL

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