Datasheet > AM8810

AM8810

更新时间： 2024-09-17 01:12:55

品牌	Logo	应用领域
创瑞 - AITSEMI		/
页数	文件大小	规格书
9页	633K
描述
N-CHANNEL ENHANCEMENT MODE POWER MOSFET

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AM8810 数据手册

AM8810

AiT Semiconductor Inc.

www.ait-ic.com

MOSFET

N-CHANNEL ENHANCEMENT MODE POWER MOSFET

DESCRIPTION

FEATURES

The AM8810 uses advanced trench technology to

provide excellent R_DS(ON), low gate charge and

operation with gate voltages as low as 2.5V. This

device is suitable for use as a load switch or in PWM

applications .It is ESD protested.



V_DS=20V,I_D=7A,

Typ.R_DS(ON)= 16mΩ @ V_GS=4.5V

Typ.R_DS(ON)= 20mΩ @ V_GS=2.5V

ESD Rating: 2kV HBM



High Power and current handing capability

Surface Mount Package

AM8810 is available in TSSOP8 package.

Available in TSSOP8 package.

ORDERING INFORMATION

APPLICATION



PWM application

Load switch

Package Type

TSSOP8

Part Number

AM8810TMX8R

AM8810TMX8VR

TMX8

PIN DESCRIPTION

V: Halogen free Package

R: Tape & Reel

Note

AiT provides all RoHS products

Suffix ꢀ V ꢀ means Halogen free Package

Schematic diagram

REV2.0

- DEC 2014 RELEASED, DEC 2014 UPDATED -

- 1 -

12 3 4 5 6 7...9

中文翻译

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