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AM8810TMX8R PDF预览

AM8810TMX8R

更新时间: 2024-11-07 01:12:55
品牌 Logo 应用领域
创瑞 - AITSEMI /
页数 文件大小 规格书
9页 633K
描述
N-CHANNEL ENHANCEMENT MODE POWER MOSFET

AM8810TMX8R 数据手册

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AM8810  
AiT Semiconductor Inc.  
www.ait-ic.com  
MOSFET  
N-CHANNEL ENHANCEMENT MODE POWER MOSFET  
DESCRIPTION  
FEATURES  
The AM8810 uses advanced trench technology to  
provide excellent RDS(ON), low gate charge and  
operation with gate voltages as low as 2.5V. This  
device is suitable for use as a load switch or in PWM  
applications .It is ESD protested.  
VDS=20V,ID=7A,  
Typ.RDS(ON) = 16mΩ @ VGS =4.5V  
Typ.RDS(ON) = 20mΩ @ VGS =2.5V  
ESD Rating: 2kV HBM  
High Power and current handing capability  
Surface Mount Package  
AM8810 is available in TSSOP8 package.  
Available in TSSOP8 package.  
ORDERING INFORMATION  
APPLICATION  
PWM application  
Load switch  
Package Type  
TSSOP8  
Part Number  
AM8810TMX8R  
AM8810TMX8VR  
TMX8  
PIN DESCRIPTION  
V: Halogen free Package  
R: Tape & Reel  
Note  
AiT provides all RoHS products  
Suffix V means Halogen free Package  
Schematic diagram  
REV2.0  
- DEC 2014 RELEASED, DEC 2014 UPDATED -  
- 1 -  

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